A comparative study on In-doping effects for MOVPE GaN films on Si(111) and sapphire substrates

2003 ◽  
Vol 0 (7) ◽  
pp. 2562-2565 ◽  
Author(s):  
A. Yamamoto ◽  
T. Tanikawa ◽  
Bablu K. Ghosh ◽  
Y. Hamano ◽  
A. Hashimoto ◽  
...  
Keyword(s):  
Comparative Study ◽  
Sapphire Substrates ◽  
In Doping ◽  
Doping Effects

Co(II), Co(II)+Mn(II), Co(II)+Ni(II) Co-doping Effects on Tris(thiourea)zinc(II) Sulphate Crystals: A Comparative Study

2015 ◽  
Vol 623 (1) ◽  
pp. 179-193 ◽  
Author(s):  
M. Rajasekar ◽  
K. Meena ◽  
K. Muthu ◽  
G. Bhagavannarayana ◽  
SP. Meenakshisundaram
Keyword(s):  
Comparative Study ◽  
Co Doping ◽  
Doping Effects

Comparative study of AlGaN/GaN heterostructures grown on different sapphire substrates

2019 ◽  
Vol 134 ◽  
pp. 106221
Author(s):  
Wen Li ◽  
Shengrui Xu ◽  
Yachao Zhang ◽  
Ruoshi Peng ◽  
Ying Zhao ◽  
...  
Keyword(s):  
Comparative Study ◽  
Sapphire Substrates

A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

1999 ◽  
Vol 595 ◽  
Author(s):  
Anand V. Sampath ◽  
Mira Misra ◽  
Kshitij Seth ◽  
Yuri. Fedyunin ◽  
Hock M. Ng ◽  
...  
Keyword(s):  
Comparative Study ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Etch Pits ◽  
Sapphire Substrates ◽  
Fabrication And Characterization

AbstractIn this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

Comparative study of Mn3+ and Mn2+ doping effects on structure and electrical properties of BiFeO3 thin films

2015 ◽  
Vol 41 ◽  
pp. S234-S239 ◽  
Author(s):  
Yinjuan Ren ◽  
Xiaohong Zhu ◽  
Jiliang Zhu ◽  
Jianguo Zhu ◽  
Dingquan Xiao
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Comparative Study ◽  
Bifeo3 Thin Films ◽  
Doping Effects

scholarly journals A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

2000 ◽  
Vol 5 (S1) ◽  
pp. 577-583
Author(s):  
Anand V. Sampath ◽  
Mira Misra ◽  
Kshitij Seth ◽  
Yuri. Fedyunin ◽  
Hock M. Ng ◽  
...  
Keyword(s):  
Comparative Study ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Etch Pits ◽  
Sapphire Substrates ◽  
Fabrication And Characterization

In this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

2009 ◽  
Vol 38 (9) ◽  
pp. 1938-1943 ◽  
Author(s):  
J. N. Dai ◽  
Z. H. Wu ◽  
C. H. Yu ◽  
Q. Zhang ◽  
Y. Q. Sun ◽  
...  
Keyword(s):  
Comparative Study ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Mocvd Growth ◽  
Aln Buffer
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