A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

In this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

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A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-595-f99w11.1 ◽

1999 ◽

Vol 595 ◽

Author(s):

Anand V. Sampath ◽

Mira Misra ◽

Kshitij Seth ◽

Yuri. Fedyunin ◽

Hock M. Ng ◽

...

Keyword(s):

Comparative Study ◽

Reverse Bias ◽

Schottky Diodes ◽

Forward Bias ◽

Etch Pits ◽

Sapphire Substrates ◽

Fabrication And Characterization

AbstractIn this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

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Comparative study of fabrication and characterization of Al-ZnO based Schottky barrier diodes using Pd and Au metal contacts

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-019-01691-5 ◽

2019 ◽

Vol 30 (14) ◽

pp. 13280-13289

Author(s):

Manisha R. Singh ◽

Mohit Sahni ◽

Munendra Singh ◽

Bhaskar Bhattacharya ◽

Naresh Kumar

Keyword(s):

Comparative Study ◽

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Metal Contacts ◽

Fabrication And Characterization

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Fabrication and characterization of Cd 0.9 Zn 0.1 Te Schottky diodes for nuclear radiation detectors

10.1117/12.896640 ◽

2011 ◽

Author(s):

Krishna C. Mandal ◽

Peter G. Muzykov ◽

Ramesh M. Krishna ◽

Timothy C. Hayes

Keyword(s):

Schottky Diodes ◽

Radiation Detectors ◽

Nuclear Radiation ◽

Fabrication And Characterization ◽

Nuclear Radiation Detectors

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Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

MRS Proceedings ◽

10.1557/proc-743-l7.11 ◽

2002 ◽

Vol 743 ◽

Author(s):

Necmi Biyikli ◽

Orhan Aytur ◽

Ibrahim Kimukin ◽

Turgut Tut ◽

Ekmel Ozbay

Keyword(s):

Power Density ◽

Dark Current ◽

Reverse Bias ◽

Low Noise ◽

Noise Power ◽

Cutoff Wavelength ◽

Solar Blind ◽

Fabrication And Characterization ◽

Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

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Fabrication and Characterization of Electrically Functional Lanthanum Hexaboride Thin Films on Ultrasmooth Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-1148-pp12-02 ◽

2008 ◽

Vol 1148 ◽

Cited By ~ 1

Author(s):

Yushi Kato ◽

Yusaburo Ono ◽

Yasuyuki Akita ◽

Makoto Hosaka ◽

Naoki Shiraishi ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam ◽

Lattice Parameter ◽

Lanthanum Hexaboride ◽

Root Mean Square Roughness ◽

Sapphire Substrates ◽

Fabrication And Characterization ◽

Laser Mbe ◽

Atomically Flat

AbstractThe crystal growth of lanthanum hexaboride (LaB6) thin films was examined by applying the laser molecular beam epitaxy (laser MBE) process. C-axis (100) highly-oriented LaB6 thin films could be fabricated on ultrasmooth sapphire (α-Al2O3 single crystal) (0001) substrates with atomic steps of 0.2 nm in height and atomically flat terraces. The obtained film exhibited a smooth surface with root mean square roughness of 0.15 nm. The lattice parameter of the LaB6 thin film was close to the bulk value reported previously. In the case of deposition on commercial mirror-polished sapphire substrates, the grown film was amorphous. The resistivity of the prepared crystalline LaB6 thin films was as low as 2.2 × 10−4 Ω cm and almost constant in the temperature range of 10–300 K.

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