Growth of homoepitaxial III-nitride layers on bulk GaN single crystals by molecular-beam epitaxy

2003 ◽  
Vol 0 (7) ◽  
pp. 2124-2127
Author(s):  
S. Iwata ◽  
S. Kubo ◽  
M. Konishi ◽  
T. Saimei ◽  
S. Kurai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystals ◽  
Molecular Beam ◽  
Bulk Gan ◽  
Nitride Layers

Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth

2004 ◽  
Vol 43 (11A) ◽  
pp. 7454-7457 ◽  
Author(s):  
Shuichi Kubo ◽  
Shiro Iwata ◽  
Satoshi Kurai ◽  
Tsunemasa Taguchi ◽  
Keiji Kainosho ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystals ◽  
Molecular Beam ◽  
Solution Growth ◽  
Homoepitaxial Growth ◽  
Bulk Gan ◽  
Pressure Controlled

scholarly journals Effect of the Buffer Layers on Lattice Polarity of GaN Epilayers Grown on the N-Face of Bulk GaN Single Crystals by Molecular-Beam Epitaxy

2003 ◽  
Vol 0 (1) ◽  
pp. 342-345
Author(s):  
S. Kubo ◽  
T. Tanabe ◽  
S. Iwata ◽  
M. Konishi ◽  
S. Kurai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystals ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Bulk Gan

scholarly journals Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

2008 ◽  
Vol 104 (8) ◽  
pp. 083510 ◽  
Author(s):  
S. Fernández-Garrido ◽  
A. Redondo-Cubero ◽  
R. Gago ◽  
F. Bertram ◽  
J. Christen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mole Fraction ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitride Layers

Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
C.T. Foxon ◽  
T.S. Cheng ◽  
D. Korakakis ◽  
S.V. Novikov ◽  
R.P. Campion ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Boundary Structure ◽  
Quantum Well Structures ◽  
Flat Surfaces ◽  
Grain Boundary Structure ◽  
Bulk Gan ◽  
Atomically Flat

AbstractVarious methods have been used to initiate growth by Molecular Beam Epitaxy (MBE) of GaN on sapphire, or other substrates, but there is always a problem with morphology and with a high defect density which results in the formation of a sub-grain boundary structure. We show that by using, homo-epitaxial growth on properly prepared bulk GaN substrates, combined with high temperature growth, we obtain a significant improvement in surface morphology. Growth at sufficiently high temperature leads to a rapid smoothing of the surface and to almost atomically flat surfaces over relatively large areas. Multi-Quantum Well structures grown on such GaN epitaxial films are dislocation free with abrupt interfaces.

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

1997 ◽  
Vol 40 (2) ◽  
pp. 214-218
Author(s):  
Nuofu Chen ◽  
Hongjia He ◽  
Yutian Wang ◽  
Lanying Lin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystals ◽  
Low Temperatures ◽  
Molecular Beam

High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN

2015 ◽  
Vol 15 (8) ◽  
pp. 4104-4109 ◽  
Author(s):  
Johannes K. Zettler ◽  
Christian Hauswald ◽  
Pierre Corfdir ◽  
Mattia Musolino ◽  
Lutz Geelhaar ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Material Quality ◽  
Gan Nanowires ◽  
Bulk Gan
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