Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy
2011 ◽
Vol 295-297
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pp. 777-780
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Keyword(s):
Bulk Gan
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In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.
1995 ◽
Vol 11
(10)
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pp. 1079-1082
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2000 ◽
Vol 209
(4)
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pp. 653-660
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1993 ◽
Vol 11
(3)
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pp. 892
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2000 ◽
Vol 212
(1-2)
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pp. 49-55
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Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy
1994 ◽
Vol 28
(1-3)
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pp. 400-403
1993 ◽
Vol 32
(Part 2, No. 7B)
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pp. L974-L977
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1999 ◽
Vol 203
(1-2)
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pp. 31-39
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