scholarly journals Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

2003 ◽  
Vol 1 (2) ◽  
pp. 368-371 ◽  
Author(s):  
J. Kasai ◽  
T. Mozume ◽  
H. Yoshida ◽  
T. Simoyama ◽  
A. V. Gopal ◽  
...  
1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).


2001 ◽  
Vol 227-228 ◽  
pp. 527-531 ◽  
Author(s):  
L.H Li ◽  
Z Pan ◽  
W Zhang ◽  
Y.W Lin ◽  
X.Y Wang ◽  
...  

2004 ◽  
Vol 43 (No. 12B) ◽  
pp. L1569-L1571 ◽  
Author(s):  
Masataka Ohta ◽  
Tomoyuki Miyamoto ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
Tatsuya Furuhata ◽  
...  

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