High temperature limitations for GaN growth by RF-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, and excess Ga-overpressure

AbstractWe have investigated microstructural properties of GaAs:N and GaN:As layers using transmission electron microscopy. The samples were grown onto (001)-oriented GaAs substrates by RF-plasma assisted molecular beam epitaxy. It has been found that during the GaAs/GaAs:N epitaxial growth the supplied active nitrogen atoms gave rise to nanometer-size GaN crystallites formed in the GaAs matrix. In addition, silicon incorporation showed abnormal behavior at the two interfaces of the thin GaAs:N layer embedded in GaAs. A model is proposed for the formation of GaN crystallites in GaAs during the growth. In the GaN:As growth, the layer exhibited columnar growth, resulting in domains with different crystallographic orientation. With an increase of the film thickness, the zincblende structure changed to the wurtzite phase of GaN. The distribution of arsenic through the layer thickness was found to be inhomogeneous and be much higher near the GaN/GaAs interface compared to the region near the surface.

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Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.05.029 ◽

2013 ◽

Vol 380 ◽

pp. 14-17 ◽

Cited By ~ 16

Author(s):

D.F. Storm ◽

D.A. Deen ◽

D.S. Katzer ◽

D.J. Meyer ◽

S.C. Binari ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Rf Plasma

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Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-160-215 ◽

1989 ◽

Vol 160 ◽

Author(s):

Y.H. Lee ◽

R.P. Burns ◽

J.B. Posthill ◽

K.J. Bachmann

Keyword(s):

Thin Films ◽

High Temperature ◽

High Resolution ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam ◽

Nucleation And Growth ◽

Multilayer Heterostructures ◽

Annealing Experiments ◽

Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

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A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-639-g3.46 ◽

2000 ◽

Vol 639 ◽

Author(s):

Ryuhei Kimura ◽

Kiyoshi Takahashi ◽

H. T. Grahn

Keyword(s):

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Molecular Beam ◽

High Energy ◽

Rf Plasma ◽

Cubic Phase ◽

X Ray Diffraction ◽

X Ray ◽

Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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