Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Hyonju Kim ◽  
T. G. Andersson ◽  
U. Södervall ◽  
C. Jäger ◽  
W. Jäger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Microstructural Characterization ◽  
Abnormal Behavior ◽  
Rf Plasma ◽  
Columnar Growth ◽  
Wurtzite Phase ◽  
Active Nitrogen ◽  
Transmission Electron

AbstractWe have investigated microstructural properties of GaAs:N and GaN:As layers using transmission electron microscopy. The samples were grown onto (001)-oriented GaAs substrates by RF-plasma assisted molecular beam epitaxy. It has been found that during the GaAs/GaAs:N epitaxial growth the supplied active nitrogen atoms gave rise to nanometer-size GaN crystallites formed in the GaAs matrix. In addition, silicon incorporation showed abnormal behavior at the two interfaces of the thin GaAs:N layer embedded in GaAs. A model is proposed for the formation of GaN crystallites in GaAs during the growth. In the GaN:As growth, the layer exhibited columnar growth, resulting in domains with different crystallographic orientation. With an increase of the film thickness, the zincblende structure changed to the wurtzite phase of GaN. The distribution of arsenic through the layer thickness was found to be inhomogeneous and be much higher near the GaN/GaAs interface compared to the region near the surface.

Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Art J. Nelson ◽  
M. Bode ◽  
G. Horner ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Symmetric Vibration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTEpitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

THE STUDY OF Al0.29Ga0.71N-BASED SCHOTTKY PHOTODIODES GROWN ON SILICON BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

2013 ◽  
Vol 27 (12) ◽  
pp. 1350085
Author(s):  
M. Z. MOHD YUSOFF ◽  
Z. HASSAN ◽  
C. W. CHIN ◽  
H. ABU HASSAN ◽  
M. J. ABDULLAH ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Rf Plasma ◽  
Yellow Emission ◽  
Band Edge Emission ◽  
Current Voltage ◽  
Standard Value ◽  
Schottky Photodiode

In this paper, the growth and characterization of epitaxial Al 0.29 Ga 0.71 N grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al 0.29 Ga 0.71 N layer on GaN / AlN / Si sample. We found that the dominant E 2 (high) phonon mode of GaN appears at 572.7 cm-1. The E 2 (high) mode of AlN appears at 656.7 cm-1 and deviates from the standard value of 655 cm-1 for unstrained AlN . Finally, AlGaN Schottky photodiode have been fabricated and analyzed by mean of electrical characterization, using current–voltage (I–V) measurement to evaluate the performance of this device.

GaN Epitaxial Growth by Molecular Beam Epitaxy utilizing AlGaN Buffer Layer with Nanopipes

2003 ◽  
Vol 764 ◽  
Author(s):  
F. Yun ◽  
L. He ◽  
M. A. Reshchikov ◽  
H. Morkoç ◽  
J. Jasinski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
Rf Plasma ◽  
Transmission Electron ◽  
Rich Condition ◽  
20 Nm ◽  
Algan Buffer

AbstractGaN layers were grown on AlGaN with nanopipes by molecular beam epitaxy (MBE) and analyzed. AlGaN films were grown by MBE using rf-plasma nitrogen source under metal-rich condition. Within the Al composition range of 0.5-0.6, open-end nanopipes were formed at the surface of AlGaN films with a density of ∼6×109 cm-2 and a size ranging from 10 to 20 nm. These nanopipes, observed within ∼300 nm of the surface, served as a nanoporous AlGaN template for re-growth of GaN epilayers. GaN epilayers grown to different thickness by MBE were studied for their microstructural and optical properties. For an AlGaN buffer layer with dislocation density of 3×1010 cm-2 near its surface, the overlaying GaN layers with thickness ranging from 0.1 μm to ∼2μm were grown and analyzed by transmission electron microscopy for dislocation density. The GaN layer started with hexagonal islands on the nanopiped AlGaN and began to coalesce at about 0.1μm thickness. At a thickness of 2.0 μm, the dislocation density reduced to ∼1×109 cm-2. Low temperature photoluminescence data demonstrate the improved optical quality of GaN epilayer grown on the porous AlGaN buffer layer.

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