Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

2013 ◽  
Vol 380 ◽  
pp. 14-17 ◽  
Author(s):  
D.F. Storm ◽  
D.A. Deen ◽  
D.S. Katzer ◽  
D.J. Meyer ◽  
S.C. Binari ◽  
...  
2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.


2005 ◽  
Vol 278 (1-4) ◽  
pp. 443-448 ◽  
Author(s):  
A. Feduniewicz ◽  
C. Skierbiszewski ◽  
M. Siekacz ◽  
Z.R. Wasilewski ◽  
I. Sproule ◽  
...  

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 291 ◽  
Author(s):  
Wei-Chun Chen ◽  
Tung-Yuan Yu ◽  
Fang-I Lai ◽  
Hung-Pin Chen ◽  
Yu-Wei Lin ◽  
...  

Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal–organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal–organic precursor served as a group-III source for the growth of InN nanocolumns. The nitridation of Si(111) under flowing N2 RF plasma and the MOMBE growth of InN nanocolumns on the nitrided Si(111) substrates were investigated along with the effects of growth temperature on the structural, optical, and chemical properties of the InN nanocolumns. Based on X-ray diffraction analysis, highly <0001>-oriented, hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. To evaluate the alignment of arrays, the deviation angles of the InN nanocolumns were measured using scanning electron microscopy. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. Raman spectroscopy confirmed the hexagonal structures of the deposited InN nanocolumns.


2002 ◽  
Vol 242 (1-2) ◽  
pp. 141-154 ◽  
Author(s):  
J.A Gupta ◽  
Z.R Wasilewski ◽  
B.J Riel ◽  
J Ramsey ◽  
G.C Aers ◽  
...  

2008 ◽  
Vol 5 (6) ◽  
pp. 1750-1752 ◽  
Author(s):  
A. R. Arehart ◽  
A. Corrion ◽  
C. Poblenz ◽  
J. S. Speck ◽  
U. K. Mishra ◽  
...  

2009 ◽  
Author(s):  
J. T. Ku ◽  
T. H. Yang ◽  
J. R. Chang ◽  
Y. Y. Wong ◽  
W. C. Chou ◽  
...  

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