Influence of surface structure on the performance of black-silicon solar cell

We present 11.7% efficient p-type crystalline silicon solar cells with a nanoscale textured surface and no dielectric antireflection coating. We propose nanocrystalline-like textured surface consisting of nanocrystalline columnar structures of diameters from 50 to 100 nm and depth of about 500 nm formed by reactive-ion etching (RIE) in multihollow cathode system. This novel nano textured surface acts as an antireflective absorbing surface of c-Si abbreviate as ARNAB (antireflective nanoabsorber). Light shining on the surface of RIE-etched silicon bounces back and forth between the spikes in such a way that most of it never comes back. Radio frequency (RF) hollow cathode discharge allows an improvement of plasma density by an order of magnitude in comparison to standard RF parallel-plate discharge. Desirable black silicon layer has been achieved when RF power of about 20 Watt per one hollow cathode glow is applied for our multihollow cathode system. The RF power frequency was 13.56 MHz. The antireflection property of ARNAB textured surface has been investigated and compared with wet-textured and PECVD coated silicon samples. Solar cell using low-cost spin-on coating technique has been demonstrated in this paper. We have successfully achieved 11.7% efficient large area (98 cm2) ARNAB textured crystalline silicon solar cell using low-cost spin-on coating (SOD) doping.

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Spectral Response Optimization of Polycrystalline Black Silicon Solar Cell by Reactive Ion Etching Combined with PERC Technology

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8547897 ◽

2018 ◽

Author(s):

Shude Zhang ◽

Hongqiang Qian ◽

Jiaqi Peng ◽

Qingzhu Wei ◽

Zhichun Ni

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Spectral Response ◽

Reactive Ion Etching ◽

Black Silicon ◽

Ion Etching ◽

Response Optimization

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Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells

International Journal of Photoenergy ◽

10.1155/2012/971093 ◽

2012 ◽

Vol 2012 ◽

pp. 1-5 ◽

Cited By ~ 5

Author(s):

Bangwu Liu ◽

Sihua Zhong ◽

Jinhu Liu ◽

Yang Xia ◽

Chaobo Li

Keyword(s):

Solar Cell ◽

Silicon Nitride ◽

Silicon Solar Cell ◽

High Efficiency ◽

Chemical Vapor ◽

Black Silicon ◽

Nitride Film ◽

Silicon Nitride Film ◽

Silicon Nitride Films ◽

Plasma Immersion Ion Implantation

The passivation process is of significant importance to produce high-efficiency black silicon solar cell due to its unique microstructure. The black silicon has been produced by plasma immersion ion implantation (PIII) process. And the Silicon nitride films were deposited by inline plasma-enhanced chemical vapor deposition (PECVD) to be used as the passivation layer for black silicon solar cell. The microstructure and physical properties of silicon nitride films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, and the microwave photoconductance decay (μ-PCD) method. With optimizing the PECVD parameters, the conversion efficiency of black silicon solar cell can reach as high as 16.25%.

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Effective Passivation of Large Area Black Silicon Solar Cells bySiO2/SiNx:H Stacks

International Journal of Photoenergy ◽

10.1155/2014/683654 ◽

2014 ◽

Vol 2014 ◽

pp. 1-6 ◽

Cited By ~ 8

Author(s):

Zengchao Zhao ◽

Bingye Zhang ◽

Ping Li ◽

Wan Guo ◽

Aimin Liu

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Conversion Efficiency ◽

Silicon Solar Cell ◽

Internal Quantum Efficiency ◽

State Density ◽

Electrical Performance ◽

Silicon Solar Cells ◽

Black Silicon ◽

Large Area

The performance of black silicon solar cells with various passivation films was characterized. Large area (156×156 mm2) black silicon was prepared by silver-nanoparticle-assisted etching on pyramidal silicon wafer. The conversion efficiency of black silicon solar cell without passivation is 13.8%. For the SiO2andSiNx:H passivation, the conversion efficiency of black silicon solar cells increases to 16.1% and 16.5%, respectively. Compared to the single film of surface passivation of black silicon solar cells, the SiO2/SiNx:H stacks exhibit the highest efficiency of 17.1%. The investigation of internal quantum efficiency (IQE) suggests that the SiO2/SiNx:H stacks films decrease the Auger recombination through reducing the surface doping concentration and surface state density of the Si/SiO2interface, andSiNx:H layer suppresses the Shockley-Read-Hall (SRH) recombination in the black silicon solar cell, which yields the best electrical performance of b-Si solar cells.

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