scholarly journals Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - annealing effect on the Er emission

2010 ◽  
pp. NA-NA
Author(s):  
M. F. Cerqueira ◽  
T. Monteiro ◽  
M. J. Soares ◽  
A. Kozanecki ◽  
P. Alpuim ◽  
...  
2006 ◽  
Vol 514-516 ◽  
pp. 23-27
Author(s):  
V. Thaiyalnayaki ◽  
M.Fátima Cerqueira ◽  
Francisco Macedo ◽  
João Alves Ferreira

Amorphous and nanocrystalline silicon thin films have been produced by reactive r.f. sputtering and their microstructure, optical and thermal properties were evaluated. A good correlation was found between the microstructure determined by Raman spectroscopy and X- ray diffraction and the thermal transport parameters.


2001 ◽  
Vol 82-84 ◽  
pp. 637-644 ◽  
Author(s):  
M.Fátima Cerqueira ◽  
Maria Losurdo ◽  
M.V. Stepikhova ◽  
Olinda Conde ◽  
M.M. Giangregorio ◽  
...  

2004 ◽  
Vol 58 (30) ◽  
pp. 3963-3966 ◽  
Author(s):  
Z.X. Zhao ◽  
R.Q. Cui ◽  
F.Y. Meng ◽  
B.C. Zhao ◽  
H.C. Yu ◽  
...  

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


2002 ◽  
Vol 403-404 ◽  
pp. 91-96 ◽  
Author(s):  
C. Gonçalves ◽  
S. Charvet ◽  
A. Zeinert ◽  
M. Clin ◽  
K. Zellama

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  

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