al2o3 gate dielectric
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Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method

2021 ◽  
Author(s):  
M. Ishiguro ◽  
S. Urano ◽  
R. S. Low ◽  
M. Faris ◽  
I. Nagase ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cvd Method ◽  
Al2o3 Gate Dielectric ◽  
Recessed Gate

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

2021 ◽  
Vol 135 ◽  
pp. 106038
Author(s):  
Cong Wang ◽  
Yu-Chen Wei ◽  
Xiao Tan ◽  
Luqman Ali ◽  
Chang-Qiang Jing
Keyword(s):  
Gate Dielectric ◽  
Gan Hemt ◽  
Al2o3 Gate Dielectric

Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric

2021 ◽  
Author(s):  
Ye Liang ◽  
Yuanlei Zhang ◽  
Yutao Cai ◽  
Zhaoyi Wang ◽  
Yinchao Zhao ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectric ◽  
Voltage Instability ◽  
Al2o3 Gate Dielectric

Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor

2020 ◽  
Vol 41 (9) ◽  
pp. 1340-1343
Author(s):  
Yue Peng ◽  
Wenwu Xiao ◽  
Genquan Han ◽  
Yan Liu ◽  
Fenning Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Effect Transistor ◽  
Al2o3 Gate Dielectric

scholarly journals Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 50465-50471 ◽  
Author(s):  
Zeyang Ren ◽  
Qi He ◽  
Jiamin Xu ◽  
Guansheng Yuan ◽  
Jinfeng Zhang ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Al2o3 Gate Dielectric

scholarly journals ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9902-9906 ◽  
Author(s):  
Kuan-Yu Chen ◽  
Chih-Chiang Yang ◽  
Chun-Yuan Huang ◽  
Yan-Kuin Su
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Oxide Thin Film ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Indium Gallium ◽  
Al2o3 Gate Dielectric

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.

InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric

2019 ◽  
Vol 25 (6) ◽  
pp. 87-92
Author(s):  
Chia-Yuan Chang ◽  
Edward Yi Chang ◽  
Wei-Ching Huang ◽  
Yung-Hsuan Su ◽  
Hai-Dang Trinh ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Al2o3 Gate Dielectric
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