7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization

2021 ◽  
Vol 52 (1) ◽  
pp. 69-72
Author(s):  
Mamoru Furuta ◽  
Kenta Shimpo ◽  
Taiki Kataoka ◽  
Daiki Tanaka ◽  
Toshihiro Matsumura ◽  
...  
1990 ◽  
Vol 182 ◽  
Author(s):  
Ichio Yudasaka ◽  
Hiroyuki Ohshima

AbstractPolysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high temperature processing. Alternative technologies to thermal oxidation are very low pressure deposition, solid-phase crystallization, laser-annealing and hydrogenation. These technologies are compatible with low temperature processing and will contribute to the advance of polysilicon thin film transistors in the future.


2019 ◽  
Vol 114 (21) ◽  
pp. 212107 ◽  
Author(s):  
K. Moto ◽  
K. Yamamoto ◽  
T. Imajo ◽  
T. Suemasu ◽  
H. Nakashima ◽  
...  

2008 ◽  
Vol 103 (4) ◽  
pp. 044508 ◽  
Author(s):  
Moojin Kim ◽  
Kyoung-Bo Kim ◽  
Ki-Yong Lee ◽  
CheolHo Yu ◽  
Hye-Dong Kim ◽  
...  

2001 ◽  
Vol 16 (11) ◽  
pp. 918-924 ◽  
Author(s):  
L Pichon ◽  
K Mourgues ◽  
F Raoult ◽  
T Mohammed-Brahim ◽  
K Kis-Sion ◽  
...  

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