Dependence of depth resolution on primary energy of low-energy Ar+ Ions (100–1000 eV) in AES sputter depth profiling of GaAs/AlAs superlattice

2006 ◽  
Vol 38 (12-13) ◽  
pp. 1598-1603 ◽  
Author(s):  
T. Bungo ◽  
T. Nagatomi ◽  
Y. Takai
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Primary Energy ◽  
Low Energy

High Resolution Auger Depth Profiles Using a Dual Ion Gun System

1985 ◽  
Vol 54 ◽  
Author(s):  
S. Ingrey ◽  
J.P.D. Cook
Keyword(s):  
Electron Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Grazing Incidence ◽  
Low Energy ◽  
Multilayer Structures ◽  
Dramatic Decrease ◽  
Depth Profiles ◽  
Order Of Magnitude ◽  
Magnitude Improvement

A dual ion gun system has been proposed (D.E. Sykes et al, Appl. Surf. Sci. 5(1980)103) to reduce texturing and improve depth resolution during Auger sputter depth profiling. We have evaluated this ion gun configuration by profiling a variety of multilayer structures. With careful alignment of the guns, we have obtained a dramatic decrease in ion-induced texturing often seen when a single ion gun is used. This effect was particularly pronounced for polycrystalline Al films on Si where an order of magnitude improvement in depth resolution was achieved. Further refinements of the technique include the use of low energy (IkeV) grazing incidence xenon ions and a small electron beam probe area. Depth profiles obtained from Ni/Cr, W/Si, and GaAs/GaAlAs multilayer structures will also be discussed.

scholarly journals Sub-nm depth resolution in sputter depth profiling by low energy ion bombardment

2004 ◽  
Vol 2 ◽  
pp. 24-27
Author(s):  
Hyung-Ik Lee ◽  
Dae Won Moon ◽  
Suhk Kun Oh ◽  
Hee Jae Kang ◽  
Hyun Kyong Kim ◽  
...  
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Bombardment ◽  
Low Energy

ToF-SIMS Depth Profiling of Organic Delta Layers with Low-Energy Cesium Ions: Depth Resolution Assessment

2019 ◽  
Vol 30 (8) ◽  
pp. 1537-1544 ◽  
Author(s):  
Céline Noël ◽  
Yan Busby ◽  
Nicolas Mine ◽  
Laurent Houssiau
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Low Energy ◽  
Cesium Ions ◽  
Tof Sims ◽  
Sims Depth Profiling

Subnanometre depth resolution in sputter depth profiling of Si layers using grazing-incident low-energy O2+ and Ar+ ions

2004 ◽  
Vol 36 (3) ◽  
pp. 259-263 ◽  
Author(s):  
Hyung-Ik Lee ◽  
Hyun Kyong Kim ◽  
Kyung Joong Kim ◽  
Dae Won Moon ◽  
Hyun Kyung Shon ◽  
...  
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Low Energy

An effect of measurement conditions on the depth resolution for low-energy dual-beam depth profiling using TOF-SIMS

2013 ◽  
Vol 45 (8) ◽  
pp. 1261-1265 ◽  
Author(s):  
Atsushi Murase ◽  
Takuya Mitsuoka ◽  
Mitsuhiro Tomita ◽  
Hisataka Takenaka ◽  
Hiromi Morita
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Low Energy ◽  
Tof Sims ◽  
Dual Beam ◽  
Beam Depth

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

scholarly journals Effect of the molecular weight on the depth profiling of PMMA thin films using low‐energy Cs + sputtering

2021 ◽  
Author(s):  
Amal Ben Hadj Mabrouk ◽  
Christophe Licitra ◽  
Antoine Chateauminois ◽  
Marc Veillerot
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Depth Profiling ◽  
Low Energy

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

1991 ◽  
Vol 240 ◽  
Author(s):  
H. S. LEE ◽  
R. T. Lareau ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
High Concentration ◽  
Ohmic Behavior ◽  
Preferential Sputtering ◽  
Specific Contact ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

2004 ◽  
Vol 231-232 ◽  
pp. 645-648 ◽  
Author(s):  
Sarah Fearn ◽  
Richard Chater ◽  
David McPhail
Keyword(s):  
Depth Profiling ◽  
Low Energy
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