The role of electron spectroscopy in corrosion science

1986 ◽  
Vol 9 (6) ◽  
pp. 345-356 ◽  
Author(s):  
J. E. Castle
1993 ◽  
Vol 322 ◽  
Author(s):  
Li-Chyong Chen ◽  
Bernard P. Bewlay

AbstractThe present paper discusses the role of ceria and hafnia dispersions in tungsten alloys on the microstructural evolution and densification kinetics during sintering. Densification kinetics were measured using dilatometry, and microstructural changes were examined using scanning electron microscopy and Auger electron spectroscopy. Activation energies for sintering were obtained by analyzing the shift of the iso-density points as a function of linear heating rate. Sintering of both tungsten and ceria-dispersed tungsten were found to be controlled by grain boundary diffusion, with apparent activation energies of 318±21 and 385±15 kJ/mole, respectively. However, densification of hafnia-dispersed tungsten is not controlled by a single mechanism. Under different conditions hafnia can enhance or retard densification; the mechanisms associated with this behavior are discussed. In particular, the relationships between sintering behavior and the tungsten-ceria and tungsten-hafnia interfaces are examined. Comparison with conventional oxide dispersoids, such as thoria, will also be made.


1983 ◽  
Vol 27 ◽  
Author(s):  
K.S. Grabowski ◽  
C.R. Gossett

ABSTRACTCr+ implantation of Ta was undertaken in an attempt to improve oxidation resistance at temperatures between 500 and 750°C, and for oxidation times up to l00h. Samples were implanted with 1.5×1017 Cr+/cm2 at 150 keV, and compared to samples implanted with 1×l016 or 1×1017 Ta+/cm2 at 145 keV to evaluate the role of physical effects from ion implantation. Following oxidation, samples were examined using helium and proton backscattering, electron and optical imaging techniques, and auger electron spectroscopy. Improved resistance to oxidation was observed in Cr+-implanted samples oxidized at 500°C for up to l00h, and at 600°C for about lh. However, some local breakdown occurred in these samples and no protection at all was observed at 750°C. Reasons for this breakdown are discussed and alternate approaches for improving oxidation resistance using ion implantation are proposed.


Sign in / Sign up

Export Citation Format

Share Document