Resistive Switching and Metallic-Filament Formation in Ag2S Nanowire Transistors

Small ◽  
2009 ◽  
Vol 5 (21) ◽  
pp. 2377-2381 ◽  
Author(s):  
Zhi-Min Liao ◽  
Chong Hou ◽  
Qing Zhao ◽  
Ding-Sheng Wang ◽  
Ya-Dong Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Filament Formation ◽  
Nanowire Transistors ◽  
Metallic Filament

The mechanism of filament formation in Ag doped Ge–Se resistive switching cell

2018 ◽  
Vol 30 (3) ◽  
pp. 2459-2463
Author(s):  
Bo Zhang ◽  
Vitezslav Zima ◽  
Petr Kutalek ◽  
Tomas Mikysek ◽  
Tomas Wagner
Keyword(s):  
Resistive Switching ◽  
Filament Formation

Photo-controllable Resistive Memory Based on Polymer Materials

2015 ◽  
Vol 1729 ◽  
pp. 119-124
Author(s):  
Mikhail Dronov ◽  
Maria Kotova ◽  
Ivan Belogorohov
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Polymer Materials ◽  
Charge Storage ◽  
Resistive Memory ◽  
Electrical Behavior ◽  
Filament Formation ◽  
Behavior Based

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on polymer materials. We demonstrate that adding photosensitive particles to admixture allows us to control switching voltages and to observe photo-induced switching in addition to electrical one. From the properties of electrically-induced resistive switching and from the presence of light-induced switching we propose the necessity to consider crossover between to different switching mechanisms – filament formation and charge storage.

Model of metallic filament formation and rupture in NiO for unipolar switching

2010 ◽  
Vol 81 (19) ◽  
Author(s):  
Hyung Dong Lee ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi
Keyword(s):  
Filament Formation ◽  
Metallic Filament

Electrode dependence of filament formation in HfO2 resistive-switching memory

2011 ◽  
Vol 109 (8) ◽  
pp. 084104 ◽  
Author(s):  
Kuan-Liang Lin ◽  
Tuo-Hung Hou ◽  
Jiann Shieh ◽  
Jun-Hung Lin ◽  
Cheng-Tung Chou ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Filament Formation ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Planar Non-Volatile Memory based on Metal Nanoparticles

2011 ◽  
Vol 1337 ◽  
Author(s):  
A. Kiazadeh ◽  
H. L. Gomes ◽  
A. R. Da Costa ◽  
P. Rocha ◽  
Q. Chen ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Charge Transport ◽  
Metal Nanoparticles ◽  
Resistive Switching ◽  
Polymer Matrix ◽  
Resistance Ratio ◽  
Gold Electrodes ◽  
Temperature Dependent ◽  
Metallic Filament ◽  
Non Volatile Memory

ABSTRACTResistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

2012 ◽  
Vol 116 (33) ◽  
pp. 17955-17959 ◽  
Author(s):  
Shuang Gao ◽  
Cheng Song ◽  
Chao Chen ◽  
Fei Zeng ◽  
Feng Pan
Keyword(s):  
Resistive Switching ◽  
Dynamic Processes ◽  
Memory Devices ◽  
Organic Memory ◽  
Organic Memory Devices ◽  
Metallic Filament
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