scholarly journals Single‐Crystal Graphene Wafers: Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition (Small 22/2019)

Small ◽  
2019 ◽  
Vol 15 (22) ◽  
pp. 1970120
Author(s):  
Xuefu Zhang ◽  
Tianru Wu ◽  
Qi Jiang ◽  
Huishan Wang ◽  
Hailong Zhu ◽  
...  
CrystEngComm ◽  
2018 ◽  
Vol 20 (12) ◽  
pp. 1711-1715 ◽  
Author(s):  
F. Mercier ◽  
H. Shimoda ◽  
S. Lay ◽  
M. Pons ◽  
E. Blanquet

A novel methodology combining CVD experiments, nanoscale characterisation and reaction–diffusion modelling demonstrates Ti1−xAlxN epitaxial growth on single crystalline AlN films.


2018 ◽  
Vol 486 ◽  
pp. 104-110 ◽  
Author(s):  
Guoyang Shu ◽  
Bing Dai ◽  
V.G. Ralchenko ◽  
A.P. Bolshakov ◽  
A.A. Khomich ◽  
...  

Small ◽  
2019 ◽  
Vol 15 (22) ◽  
pp. 1805395 ◽  
Author(s):  
Xuefu Zhang ◽  
Tianru Wu ◽  
Qi Jiang ◽  
Huishan Wang ◽  
Hailong Zhu ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (16) ◽  
pp. 8800-8804 ◽  
Author(s):  
Yang Wang ◽  
Yu Cheng ◽  
Yunlu Wang ◽  
Shuai Zhang ◽  
Xuewei Zhang ◽  
...  

Chemical vapor deposition is used for the growth of scalable single-crystal graphene by seamlessly stitching millimeter-sized aligned hexagonal domains on different types of commercial Cu foils, without repeated substrate polishing and H2annealing.


2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Chaocheng Wang ◽  
Wei Chen ◽  
Cheng Han ◽  
Guang Wang ◽  
Binbing Tang ◽  
...  

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