High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer

Applied Physics Letters ◽

10.1063/1.1365950 ◽

2001 ◽

Vol 78 (18) ◽

pp. 2784-2786 ◽

Author(s):

Shih-Yen Lin ◽

Yau-Ren Tsai ◽

Si-Chen Lee

Keyword(s):

Quantum Dot ◽

High Performance ◽

Infrared Photodetectors ◽

Blocking Layer ◽

Quantum Dot Infrared Photodetectors ◽

Gaas Quantum Dot

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High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer

Infrared Physics & Technology ◽

10.1016/s1350-4495(01)00108-6 ◽

2001 ◽

Vol 42 (3-5) ◽

pp. 473-477 ◽

Author(s):

S.Y Wang ◽

S.D Lin ◽

H.W Wu ◽

C.P Lee

Keyword(s):

Quantum Dot ◽

High Performance ◽

Infrared Photodetectors ◽

Blocking Layer ◽

Quantum Dot Infrared Photodetectors ◽

Current Blocking Layer ◽

Gaas Quantum Dot ◽

Current Blocking

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Uniformly doped InAs/GaAs quantum-dot infrared photodetectors with AlGaAs current blocking layer

5th IEEE Conference on Nanotechnology, 2005. ◽

10.1109/nano.2005.1500786 ◽

2005 ◽

Author(s):

D. Pal ◽

E. Towe

Keyword(s):

Quantum Dot ◽

Infrared Photodetectors ◽

Blocking Layer ◽

Quantum Dot Infrared Photodetectors ◽

Current Blocking Layer ◽

Gaas Quantum Dot ◽

Current Blocking

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Single-Period InAs–GaAs Quantum-Dot Infrared Photodetectors

IEEE Photonics Technology Letters ◽

10.1109/lpt.2008.928847 ◽

2008 ◽

Vol 20 (18) ◽

pp. 1575-1577

Author(s):

Shu-Ting Chou ◽

Shih-Yen Lin ◽

Chi-Che Tseng ◽

Yi-Hao Chen ◽

Cheng-Nan Chen ◽

...

Keyword(s):

Quantum Dot ◽

Infrared Photodetectors ◽

Single Period ◽

Quantum Dot Infrared Photodetectors ◽

Gaas Quantum Dot

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Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.2011.2105255 ◽

2011 ◽

Vol 47 (5) ◽

pp. 577-590 ◽

Author(s):

I McKerracher ◽

J Wong-Leung ◽

G Jolley ◽

Lan Fu ◽

H H Tan ◽

...

Keyword(s):

Quantum Dot ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Gaas Quantum Dot

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InAs∕GaAs quantum-dot infrared photodetectors grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190675 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1532 ◽

Author(s):

D. Pal ◽

J. Walker ◽

E. Towe

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Molecular Beam ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Gaas Quantum Dot

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High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

Applied Physics Letters ◽

10.1063/1.2719160 ◽

2007 ◽

Vol 90 (13) ◽

pp. 131112 ◽

Author(s):

H. Lim ◽

S. Tsao ◽

W. Zhang ◽

M. Razeghi

Keyword(s):

Quantum Dot ◽

High Performance ◽

Room Temperature ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Inp Substrate ◽

Inas Quantum Dot

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In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

IEEE Electron Device Letters ◽

10.1109/led.2005.853635 ◽

2005 ◽

Vol 26 (9) ◽

pp. 628-630 ◽

Author(s):

L. Fu ◽

P. Lever ◽

K. Sears ◽

H.H. Tan ◽

C. Jagadish

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Metal Organic ◽

Gaas Quantum Dot ◽

Organic Chemical Vapor Deposition

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Thermal Annealing Study On InGaAs/GaAs Quantum Dot Infrared Photodetectors

2006 International Conference on Nanoscience and Nanotechnology ◽

10.1109/iconn.2006.340661 ◽

2006 ◽

Author(s):

L. Fu ◽

I. Mckerracher ◽

H.H. Tan ◽

C. Jagadish

Keyword(s):

Quantum Dot ◽

Thermal Annealing ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Annealing Study ◽

Gaas Quantum Dot

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Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors

Small ◽

10.1002/smll.202003397 ◽

2020 ◽

Vol 16 (47) ◽

pp. 2003397

Author(s):

Kaimin Xu ◽

Wenjia Zhou ◽

Zhijun Ning

Keyword(s):

Quantum Dot ◽

High Performance ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Device Engineering

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Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4894461 ◽

2014 ◽

Vol 32 (5) ◽

pp. 051208 ◽

Author(s):

Hemant Ghadi ◽

Akshay Agarwal ◽

Sourav Adhikary ◽

Binita Tongbram ◽

Arjun Mandal ◽

...

Keyword(s):

Quantum Dot ◽

Infrared Photodetectors ◽

Barrier Thickness ◽

Quantum Dot Infrared Photodetectors ◽

Gaas Quantum Dot

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