High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

Mapping Intimacies ◽

10.1117/12.597139 ◽

2005 ◽

Author(s):

Wei Zhang ◽

Ho-Chul Lim ◽

Maho Taguchi ◽

Stanley Tsao ◽

John Szafraniec ◽

...

Keyword(s):

Quantum Dot ◽

High Performance ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Inas Quantum Dot

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High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

Applied Physics Letters ◽

10.1063/1.2719160 ◽

2007 ◽

Vol 90 (13) ◽

pp. 131112 ◽

Author(s):

H. Lim ◽

S. Tsao ◽

W. Zhang ◽

M. Razeghi

Keyword(s):

Quantum Dot ◽

High Performance ◽

Room Temperature ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Inp Substrate ◽

Inas Quantum Dot

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Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors

Small ◽

10.1002/smll.202003397 ◽

2020 ◽

Vol 16 (47) ◽

pp. 2003397

Author(s):

Kaimin Xu ◽

Wenjia Zhou ◽

Zhijun Ning

Keyword(s):

Quantum Dot ◽

High Performance ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Device Engineering

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High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer

Applied Physics Letters ◽

10.1063/1.1365950 ◽

2001 ◽

Vol 78 (18) ◽

pp. 2784-2786 ◽

Author(s):

Shih-Yen Lin ◽

Yau-Ren Tsai ◽

Si-Chen Lee

Keyword(s):

Quantum Dot ◽

High Performance ◽

Infrared Photodetectors ◽

Blocking Layer ◽

Quantum Dot Infrared Photodetectors ◽

Gaas Quantum Dot

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High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature and high operating temperature focal plane array

10.1117/12.719691 ◽

2007 ◽

Author(s):

S. Tsao ◽

H. Lim ◽

W. Zhang ◽

M. Razeghi

Keyword(s):

Quantum Dot ◽

Focal Plane ◽

High Performance ◽

Room Temperature ◽

Operating Temperature ◽

Focal Plane Array ◽

High Operating Temperature ◽

Quantum Dot Infrared Photodetectors ◽

Inp Substrate ◽

Inas Quantum Dot

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Study of Multi-stacked InAs Quantum Dot Infrared Photodetectors Grown by Metal Organic Chemical Vapor Deposition

Applied Science and Convergence Technology ◽

10.5757/jkvs.2010.19.3.217 ◽

2010 ◽

Vol 19 (3) ◽

pp. 217-223 ◽

Author(s):

Jung-Sub Kim ◽

Seung-Kyu Ha ◽

Chang-Jae Yang ◽

Jae-Yel Lee ◽

Se-Hun Park ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Metal Organic ◽

Inas Quantum Dot ◽

Organic Chemical Vapor Deposition

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High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition

Applied Physics Letters ◽

10.1063/1.1923176 ◽

2005 ◽

Vol 86 (19) ◽

pp. 191103 ◽

Author(s):

W. Zhang ◽

H. Lim ◽

M. Taguchi ◽

S. Tsao ◽

B. Movaghar ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Metal Organic ◽

Inas Quantum Dot ◽

Organic Chemical Vapor Deposition

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High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer

Infrared Physics & Technology ◽

10.1016/s1350-4495(01)00108-6 ◽

2001 ◽

Vol 42 (3-5) ◽

pp. 473-477 ◽

Author(s):

S.Y Wang ◽

S.D Lin ◽

H.W Wu ◽

C.P Lee

Keyword(s):

Quantum Dot ◽

High Performance ◽

Infrared Photodetectors ◽

Blocking Layer ◽

Quantum Dot Infrared Photodetectors ◽

Current Blocking Layer ◽

Gaas Quantum Dot ◽

Current Blocking

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Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection

Journal of Applied Physics ◽

10.1063/1.1504167 ◽

2002 ◽

Vol 92 (7) ◽

pp. 4141-4143 ◽

Author(s):

Zhengmao Ye ◽

Joe C. Campbell ◽

Zhonghui Chen ◽

Eui-Tae Kim ◽

Anupam Madhukar

Keyword(s):

Quantum Dot ◽

Far Infrared ◽

Infrared Detection ◽

Infrared Photodetectors ◽

Quantum Dot Infrared Photodetectors ◽

Inas Quantum Dot

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Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using In[sub x]Ga[sub 1−x]As capping layers

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1463695 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1188 ◽

Author(s):

Eui-Tae Kim ◽

Zhonghui Chen ◽

Max Ho ◽

Anupam Madhukar

Keyword(s):

Quantum Dot ◽

Infrared Photodetectors ◽

Long Wavelength ◽

Quantum Dot Infrared Photodetectors ◽

Dual Response ◽

Inas Quantum Dot

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InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers

Journal of Applied Physics ◽

10.1063/1.1517750 ◽

2002 ◽

Vol 92 (12) ◽

pp. 7462-7468 ◽

Author(s):

Zhengmao Ye ◽

Joe C. Campbell ◽

Zhonghui Chen ◽

Eui-Tae Kim ◽

Anupam Madhukar

Keyword(s):

Quantum Dot ◽

Infrared Photodetectors ◽

Strain Relief ◽

Quantum Dot Infrared Photodetectors ◽

Inas Quantum Dot

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