Polymer Thin Films for Anti-Reflection and Passivation on the Front Surface of Interdigitated Back Contact c-Si Solar Cell

Solar RRL ◽  
2017 ◽  
Vol 1 (7) ◽  
pp. 1700079 ◽  
Author(s):  
Jianhui Chen ◽  
Yanjiao Shen ◽  
Bingbing Chen ◽  
Kunpeng Ge ◽  
Jianxin Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Polymer Thin Films ◽  
Front Surface ◽  
Back Contact ◽  
Si Solar Cell

scholarly journals Polymer Thin Films for Anti-Reflection and Passivation on the Front Surface of Interdigitated Back Contact c-Si Solar Cell (Solar RRL 7∕2017)

Solar RRL ◽  
2017 ◽  
Vol 1 (7) ◽  
pp. 1770125
Author(s):  
Jianhui Chen ◽  
Yanjiao Shen ◽  
Bingbing Chen ◽  
Kunpeng Ge ◽  
Jianxin Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Polymer Thin Films ◽  
Front Surface ◽  
Back Contact ◽  
Si Solar Cell

Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

2007 ◽  
Vol 91 (6) ◽  
pp. 063507 ◽  
Author(s):  
Meijun Lu ◽  
Stuart Bowden ◽  
Ujjwal Das ◽  
Robert Birkmire
Keyword(s):  
Solar Cell ◽  
Surface Passivation ◽  
Front Surface ◽  
Heterojunction Solar Cell ◽  
Back Contact ◽  
Silicon Heterojunction Solar Cell

Influence of Cu Dopant on SnS Thin Films Characterization and Enhance Efficiency of p-SnS:Cu /n-Si Solar Cell

2021 ◽  
Vol 886 ◽  
pp. 66-74
Author(s):  
Hanan K. Hassun ◽  
Bushra H. Hussein ◽  
Bushra K.H. Al-Maiyaly ◽  
Auday H. Shaban
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Energy Gap ◽  
Photovoltaic Effect ◽  
Morphological Properties ◽  
Optimum Level ◽  
Tin Sulfide ◽  
Solar Cell Application ◽  
Crystallinity Degree ◽  
Si Solar Cell

Thin films Tin sulfide SnS pure and doped with different ratios of Cu (X=0, 0.01, 0.03 and 0.05) were prepared using thermal evaporation with a vacuum of 4*10-6 mbar on two types of substrates n-type Si and glass with (500) nm thickness for solar cell application. X-ray diffraction and AFM analysis were carried out to explain the influence of Cu ratio dopant on structural and morphological properties respectively. SnS phase appeared forming orthorhombic structure with preferred orientation (111), increase the crystallinity degree and surface roughness with increase Cu ratio. UV/Visible measurement revealed the decrease in energy gap from 1.9eV for pure SnS to 1.5 for SnS: Cu (0.05) making these samples suitable for photovoltaic application. On the other hand, Hall Effect indicated the high percentage of Cu increased carrier concentration and mobility. Current-voltage characteristics of p-SnS: Cu / n-Si demonstrate good photovoltaic effect as ratios of Cu increased and the contact parameters which obtained from these measurement show good dependence on doping concentration. In addition, 0.05 of Cu doping was an optimum level of concentration doping increase the efficiency of SnS: Cu /Si solar cell to 3.5%.

Influence of O2 plasma treatment on H2 post-treated BZO thin films for TCO of a-Si solar cell

2010 ◽  
Author(s):  
Ha Jin Yoo ◽  
Chang Gil Son ◽  
Eun Ha Choi ◽  
Guangsup Cho ◽  
Gi Chung Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Plasma Treatment ◽  
Si Solar Cell

Enhanced solar cell performance of Cu2ZnSnSe4 thin films through structural control by using selenide stacked nanolayer in non-toxic selenium atmosphere

2021 ◽  
Author(s):  
Fang-I Lai ◽  
Jui-Fu Yang ◽  
Yu-Chao Hsu ◽  
Shou-Yi Kuo
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Double Layer ◽  
Structural Control ◽  
Layer Structure ◽  
Cell Performance ◽  
Back Contact ◽  
Solar Cell Performance ◽  
Double Layer Structure

Double layer distribution can be observed in Cu2SnZnSe4 (CZTSe) thin films prepared via the selenization of metallic precursors. The double layer structure may cause the back contact of Mo substrates...

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