Pressure spectroscopy of localized levels

2008 ◽  
pp. 420-429 ◽  
Author(s):  
Sylwester Porowski
Keyword(s):  
Localized Levels

scholarly journals HfS2 and TiS2 Monolayers with Adsorbed C, N, P Atoms: A First Principles Study

Catalysts ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 94
Author(s):  
Mailing Berwanger ◽  
Rajeev Ahuja ◽  
Paulo Cesar Piquini
Keyword(s):  
Density Functional Theory ◽  
Electronic Properties ◽  
Molecular Species ◽  
First Principles ◽  
Density Functional ◽  
2D Materials ◽  
Metallic Behavior ◽  
Functional Theory ◽  
Structural And Electronic Properties ◽  
Localized Levels

First principles density functional theory was used to study the energetic, structural, and electronic properties of HfS 2 and TiS 2 materials in their bulk, pristine monolayer, as well as in the monolayer structure with the adsorbed C, N, and P atoms. It is shown that the HfS 2 monolayer remains a semiconductor while TiS 2 changes from semiconductor to metallic behavior after the atomic adsorption. The interaction with the external atoms introduces localized levels inside the band gap of the pristine monolayers, significantly altering their electronic properties, with important consequences on the practical use of these materials in real devices. These results emphasize the importance of considering the interaction of these 2D materials with common external atomic or molecular species.

Interaction-induced threshold singularities in tunneling via localized levels

1992 ◽  
Vol 46 (23) ◽  
pp. 15337-15347 ◽  
Author(s):  
K. A. Matveev ◽  
A. I. Larkin
Keyword(s):  
Localized Levels

Localized levels in the energy Gap of PbI2 crystals evidenced by the TSC method

1976 ◽  
Vol 38 (2) ◽  
pp. K175-K178 ◽  
Author(s):  
M. Constantinescu ◽  
C. Ghita ◽  
L. Ghita ◽  
I. Baltog
Keyword(s):  
Energy Gap ◽  
Localized Levels

Transport and localized levels in amorphous binary chalcogenides

1974 ◽  
Vol 25 (7) ◽  
pp. 419-421 ◽  
Author(s):  
Richard H. Bube ◽  
John E. Mahan ◽  
Ralph T.‐S. Shiah ◽  
Hubert A. Vander Plas
Keyword(s):  
Localized Levels

On the density of localized levels in amorphous silicon

1979 ◽  
Vol 18 (4) ◽  
pp. 427-429 ◽  
Author(s):  
H. -J. Hoffmann
Keyword(s):  
Amorphous Silicon ◽  
Localized Levels

EFFECT OF THE COUPLING BETWEEN THE NORMAL AND LATERAL DEGREES OF FREEDOM ON LOCALIZED ELECTRONIC STATES IN SUPERLATTICE'S WITH STRUCTURAL DEFECTS

2000 ◽  
Vol 14 (24) ◽  
pp. 2587-2596
Author(s):  
KE-QIU CHEN ◽  
XUE-HUA WANG ◽  
BEN-YUAN GU
Keyword(s):  
Magnetic Field ◽  
Transverse Wave ◽  
Structural Defect ◽  
Degrees Of Freedom ◽  
Coupling Effect ◽  
Electronic States ◽  
Defect Layer ◽  
Wave Number ◽  
Structural Defects ◽  
Localized Levels

Using a effect-barrier height method, we investigate the effect of coupling between normal and lateral degree of freedom of an electron on the localized electronic states at zero and finite magnetic fields perpendicular to interfaces in SL's with structural defect layer within the framework of effective-mass theory. The numerical calculations for GaAs/AlxGa1-xAs material show that minibands, minigaps and localized levels is obviously dependent on the transverse wave number kxy. Magneto-coupling effect brings about not only the splitting of the localized electron levels but also the definite dependence of the minibands, minigaps, localized levels and localization degree on magnetic field and Landau indices. It is believed that applying an appropriate magnetic field may provide a available way to control the minibands, minigaps and localized levels in structural defect superlattice's to match practice requirements.

Optical absorption on localized levels in gallium arsenide

1974 ◽  
Vol 9 (10) ◽  
pp. 4171-4177 ◽  
Author(s):  
D. Bois ◽  
P. Pinard
Keyword(s):  
Gallium Arsenide ◽  
Optical Absorption ◽  
Localized Levels
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