High angle fiber diffraction studies on conformational transitions in DNA using synchrotron radiation

1989 ◽  
pp. 31-59
Author(s):  
Robert J. Greenall ◽  
Watson Fuller
Keyword(s):  
Synchrotron Radiation ◽  
Conformational Transitions ◽  
High Angle ◽  
Fiber Diffraction

X-ray high-angle fibre diffraction studies of nucleic acid structure using the Daresbury Synchrotron Radiation Source

1986 ◽  
Vol 14 (3) ◽  
pp. 553-557 ◽  
Author(s):  
V. T. FORSYTH ◽  
R. J. GREENALL ◽  
R. HUSSAIN ◽  
A. MAHENDRASINGAM ◽  
C. NAVE ◽  
...  
Keyword(s):  
Nucleic Acid ◽  
Synchrotron Radiation ◽  
Radiation Source ◽  
Synchrotron Radiation Source ◽  
High Angle ◽  
Nucleic Acid Structure ◽  
X Ray ◽  
Fibre Diffraction ◽  
Acid Structure

High-angle neutron fiber diffraction studies of DNA

Neutron News ◽  
1992 ◽  
Vol 3 (4) ◽  
pp. 21-24 ◽  
Author(s):  
V. T. Forsyth ◽  
P. Langan ◽  
A. Mahendrasingam ◽  
W. Fuller ◽  
S. A. Mason
Keyword(s):  
High Angle ◽  
Fiber Diffraction

Measurement of the Displacement Across a Coincidence Grain Boundary

1977 ◽  
Vol 35 ◽  
pp. 124-125
Author(s):  
J. W. Matthews ◽  
W. M. Stobbs
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Stacking Fault ◽  
The Other ◽  
Measuring Technique ◽  
High Angle ◽  
Twin Boundaries ◽  
Rigid Displacement ◽  
Cubic Crystals ◽  
Lattice Displacement

Many high-angle grain boundaries in cubic crystals are thought to be either coincidence boundaries (1) or coincidence boundaries to which grain boundary dislocations have been added (1,2). Calculations of the arrangement of atoms inside coincidence boundaries suggest that the coincidence lattice will usually not be continuous across a coincidence boundary (3). There will usually be a rigid displacement of the lattice on one side of the boundary relative to that on the other. This displacement gives rise to a stacking fault in the coincidence lattice.Recently, Pond (4) and Smith (5) have measured the lattice displacement at coincidence boundaries in aluminum. We have developed (6) an alternative to the measuring technique used by them, and have used it to find two of the three components of the displacement at {112} lateral twin boundaries in gold. This paper describes our method and presents a brief account of the results we have obtained.

A High Angle, Double Tilting Cold Stage for the AEI EM7

1974 ◽  
Vol 32 ◽  
pp. 450-451
Author(s):  
P.R. Swann ◽  
A.E. Lloyd
Keyword(s):  
Habit Plane ◽  
Temperature Control ◽  
Tilt Angle ◽  
Cooling System ◽  
Thermal Drift ◽  
High Angle ◽  
Cold Stage ◽  
High Degree ◽  
Better Than

Figure 1 shows the design of a specimen stage used for the in situ observation of phase transformations in the temperature range between ambient and −160°C. The design has the following features a high degree of specimen stability during tilting linear tilt actuation about two orthogonal axes for accurate control of tilt angle read-out high angle tilt range for stereo work and habit plane determination simple, robust construction temperature control of better than ±0.5°C minimum thermal drift and transmission of vibration from the cooling system.

Conformational Transitions in Escherichia coli Ribosomal RNAs as Visualized by Dedicated STEM

1988 ◽  
Vol 46 ◽  
pp. 176-177
Author(s):  
J.S. Wall ◽  
V. Maridiyan ◽  
S. Tumminia ◽  
J. Hairifeld ◽  
M. Boublik
Keyword(s):  
Ionic Strength ◽  
Three Dimensional ◽  
Conformational Transitions ◽  
Dark Field ◽  
Dimensional Structure ◽  
Ribosomal Rnas ◽  
Field Mode ◽  
Freeze Dried ◽  
High Resolution Images ◽  
Low Ionic Strength

The high contrast in the dark-field mode of dedicated STEM, specimen deposition by the wet film technique and low radiation dose (1 e/Å2) at -160°C make it possible to obtain high resolution images of unstained freeze-dried macromolecules with minimal structural distortion. Since the image intensity is directly related to the local projected mass of the specimen it became feasible to determine the molecular mass and mass distribution within individual macromolecules and from these data to calculate the linear density (M/L) and the radii of gyration.2 This parameter (RQ), reflecting the three-dimensional structure of the macromolecular particles in solution, has been applied to monitor the conformational transitions in E. coli 16S and 23S ribosomal RNAs in solutions of various ionic strength.In spite of the differences in mass (550 kD and 1050 kD, respectively), both 16S and 23S RNA appear equally sensitive to changes in buffer conditions. In deionized water or conditions of extremely low ionic strength both appear as filamentous structures (Fig. la and 2a, respectively) possessing a major backbone with protruding branches which are more frequent and more complex in 23S RNA (Fig. 2a).

Observations of dislocation interactions with recrystallized grain boundaries

1988 ◽  
Vol 46 ◽  
pp. 628-629
Author(s):  
C. W. Price
Keyword(s):  
Dislocation Density ◽  
Grain Boundary ◽  
Strain Rate ◽  
Grain Boundaries ◽  
Dislocation Structure ◽  
Hot Deformation ◽  
Static Recrystallization ◽  
High Dislocation Density ◽  
High Angle ◽  
Dislocation Interactions

Little evidence exists on the interaction of individual dislocations with recrystallized grain boundaries, primarily because of the severely overlapping contrast of the high dislocation density usually present during recrystallization. Interesting evidence of such interaction, Fig. 1, was discovered during examination of some old work on the hot deformation of Al-4.64 Cu. The specimen was deformed in a programmable thermomechanical instrument at 527 C and a strain rate of 25 cm/cm/s to a strain of 0.7. Static recrystallization occurred during a post anneal of 23 s also at 527 C. The figure shows evidence of dissociation of a subboundary at an intersection with a recrystallized high-angle grain boundary. At least one set of dislocations appears to be out of contrast in Fig. 1, and a grainboundary precipitate also is visible. Unfortunately, only subgrain sizes were of interest at the time the micrograph was recorded, and no attempt was made to analyze the dislocation structure.

Determination of the lattice translation across {110} APBs in GaAs

1988 ◽  
Vol 46 ◽  
pp. 600-601
Author(s):  
D.R. Rasmussen ◽  
N.-H. Cho ◽  
C.B. Carter
Keyword(s):  
Grain Boundaries ◽  
Lower Energy ◽  
Antiphase Boundary ◽  
The Other ◽  
Boundary Structure ◽  
Interface Plane ◽  
Inversion Symmetry ◽  
High Angle ◽  
Equilibrium Distance

Domains in GaAs can exist which are related to one another by the inversion symmetry, i.e., the sites of gallium and arsenic in one domain are interchanged in the other domain. The boundary between these two different domains is known as an antiphase boundary [1], In the terminology used to describe grain boundaries, the grains on either side of this boundary can be regarded as being Σ=1-related. For the {110} interface plane, in particular, there are equal numbers of GaGa and As-As anti-site bonds across the interface. The equilibrium distance between two atoms of the same kind crossing the boundary is expected to be different from the length of normal GaAs bonds in the bulk. Therefore, the relative position of each grain on either side of an APB may be translated such that the boundary can have a lower energy situation. This translation does not affect the perfect Σ=1 coincidence site relationship. Such a lattice translation is expected for all high-angle grain boundaries as a way of relaxation of the boundary structure.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

Sign in / Sign up

Export Citation Format

Share Document