Dislocation-toughened ceramics

Dislocations are mobile at low temperatures in surprisingly many ceramics but sintering minimizes their densities. Enabling local plasticity by engineering a high dislocation density is a way to combat short cracks and toughen ceramics.

Superior Temperature-Dependent Mechanical Properties and Deformation Behavior of Equiatomic CoCrFeMnNi High-Entropy Alloy Additively Manufactured by Selective Laser Melting

The microstructure, temperature-dependent mechanical properties and deformation behaviors of equiatomic CoCrFeMnNi high-entropy alloy (HEA) additively manufactured by selective laser melting (SLM) were investigated. SLM-built HEA had a face-centered cubic (FCC) single-phase random solid solution. In addition, SLM-built HEA was composed of epitaxial growth grains, dislocation network and nano-sized oxides. Room- and high-temperature compression tests confirmed that SLM-built HEA has outstanding mechanical properties in all temperature ranges compared to equiatomic CoCrFeMnNi HEAs reported up to the present. The excellent mechanical properties of SLM-built HEA were achieved with fine grains, high dislocation density and fine precipitates at low temperatures (25 °C to 600 °C), and by high dislocation density and fine precipitates at high temperatures (700 °C or higher). On the other hand, the deformation microstructure showed that slip and deformation twins are the main deformation mechanisms from 25 °C to 600 °C, and slip and partial recrystallization are the main deformation mechanisms above 700 °C. Based on the above findings, this study also discusses correlations among the microstructure, superior mechanical properties and deformation mechanisms of SLM-built equiatomic CoCrFeMnNi HEA.

Improvement of GaN crystalline quality by SiNx layer grown by MOVPE

In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying GaN layers. The SiNx interlayer is very effective when the original dislocation density is high, while in the case of lower dislocation density the deposition of SiNx is not effective for crystal quality improvement. Although it is widely accepted that SiNx serves as a barrier for dislocation propagation, similarly to the enhanced lateral overgrowth method, it is shown that after masking the SiNx deposition cannot be the dominant dislocation reduction mechanism. The most probable mechanism is the annihilation of bended neighbouring dislocations during the coalescence of 3D islands. The SiNx layer cannot serve as a barrier for dislocations, since it is probably dissolved during the following GaN growth and dissolved Si atoms are incorporated into the above-grown GaN layer which stimulates the 3D island formation. Then the use of the SiNx interlayer for dislocation reduction is recommended only for the improvement of layers with a high dislocation density. On the other hand, the PL signal was strongly enhanced for both low and high dislocation density structures with the SiNx interlayer, suggesting that the interlayer might help to suppress the nonradiative recombination in subsequent GaN that is not related to the dislocation density, which remained the same. But its origin has to be studied further.

Unusual Plastic Deformation Behavior in Lath Martensitic Steel Containing High Dislocation Density

To understand the strengthening mechanism of a metallic material with high dislocation density, the plastic deformation behavior of lath martensite was studied by means of in situ neutron diffraction measurements during tensile deformations using a 22SiMn2TiB steel and a Fe-18Ni alloy. The characteristics of dislocation were analyzed and were discussed with the relation of stress-strain curves. The dislocation densities (ρ) induced by martensitic transformation during heat-treatment in both materials were found to be originally as high as 1015 m-2 order, and subsequently to increase slightly by the tensile deformation. The parameter M value which displays the dislocation arrangement dropped drastically at the beginning of plastic deformation in both materials, indicating that the random arrangement became more like a dipole arrangement.