Potential Applications and Impact of Most-Recent Silicon Carbide Power Electronics in Wind Turbine Systems

2012 ◽  
pp. 81-109
Author(s):  
Hui Zhang ◽  
Haiwen Liu
Keyword(s):  
Silicon Carbide ◽  
Wind Turbine ◽  
Power Electronics ◽  
Potential Applications

scholarly journals Current and Potential Applications of Additive Manufacturing for Power Electronics

2021 ◽  
Vol 2 ◽  
pp. 33-42
Author(s):  
Luis Lopera ◽  
Romina Rodriguez ◽  
Mostafa Yakout ◽  
Mo Elbestawi ◽  
Ali Emadi
Keyword(s):  
Additive Manufacturing ◽  
Power Electronics ◽  
Potential Applications

On the Progress Made in GaN Vertical Device Technology

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940010
Author(s):  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Wide Range ◽  
Higher Power ◽  
Key Driver ◽  
Bandgap Semiconductors ◽  
Device Technology ◽  
Made In

Silicon technology enabled most of the electronics we witness today, including power electronics. However, wide bandgap semiconductors are capable of addressing high-power electronics more efficiently compared to Silicon, where higher power density is a key driver. Among the wide bandgap semiconductors, silicon carbide (SiC) and gallium nitride (GaN) are in the forefront in power electronics. GaN is promising in its vertical device topology. From CAVETs to MOSFETs, GaN has addressed voltage requirements over a wide range. Our current research in GaN offers a promising view of GaN that forms the theme of this article. CAVETs and OGFETs (a type of MOSFET) in GaN are picked to sketch the key achievements made in GaN vertical device over the last decade.

scholarly journals Buckling Porous SiC Membranes

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 785
Author(s):  
Markus Leitgeb ◽  
Christopher Zellner ◽  
Manuel Dorfmeister ◽  
Michael Schneider ◽  
Ulrich Schmid
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Design Concepts ◽  
Photochemical Etching ◽  
Potential Applications ◽  
Etching Parameters ◽  
Porous Sic ◽  
Highly Porous

In preliminary studies it could be shown that single crystalline silicon carbide wafers can be porosified with metal assisted photochemical etching. Furthermore, the generation of porous areas which are locally defined is possible with this method. By adjusting the etching parameters, a highly porous layer (degree of porosity of 90%) can be formed which is under-etched by a line of breakage. By depositing a compressively stressed amorphous SiC:H thin film on top of a porous region, the a-SiC:H film can be locally separated from the substrate, resulting in a buckled membrane configuration. Such membranes might open up potential applications in MEMS design concepts.

scholarly journals Using Improved Power Electronics Modeling and Turbine Control to Improve Wind Turbine Reliability

2015 ◽  
Vol 30 (3) ◽  
pp. 1043-1051 ◽  
Author(s):  
Ting Lei ◽  
Mike Barnes ◽  
Sandy Smith ◽  
Sung-ho Hur ◽  
Adam Stock ◽  
...  
Keyword(s):  
Wind Turbine ◽  
Power Electronics
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