On the Progress Made in GaN Vertical Device Technology

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940010
Author(s):  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Wide Range ◽  
Higher Power ◽  
Key Driver ◽  
Bandgap Semiconductors ◽  
Device Technology ◽  
Made In

Silicon technology enabled most of the electronics we witness today, including power electronics. However, wide bandgap semiconductors are capable of addressing high-power electronics more efficiently compared to Silicon, where higher power density is a key driver. Among the wide bandgap semiconductors, silicon carbide (SiC) and gallium nitride (GaN) are in the forefront in power electronics. GaN is promising in its vertical device topology. From CAVETs to MOSFETs, GaN has addressed voltage requirements over a wide range. Our current research in GaN offers a promising view of GaN that forms the theme of this article. CAVETs and OGFETs (a type of MOSFET) in GaN are picked to sketch the key achievements made in GaN vertical device over the last decade.

Potential and Challenges of Diamond Wafer Toward Power Electronics

2018 ◽  
Vol 12 (2) ◽  
pp. 175-178
Author(s):  
Shinichi Shikata ◽  
Keyword(s):  
Energy Saving ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Power Device ◽  
Surface Finishing ◽  
Low Resistivity ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Century Development ◽  
Device Technology

To achieve a 50% worldwide reduction of CO2by the middle of this century, development of energy saving power device technology using wide bandgap materials is urgently needed. Diamond is receiving increasing attention as a next generation material for wide bandgap semiconductors owing to its extreme characteristics. Research studies investigating large wafers, low resistivity, and low dislocation have accelerated. This study targets the use of wafers for power electronics applications, and the required machining technologies for diamond, including wafer shaping, slicing, and surface finishing, are introduced.

Wide Bandgap Semiconductors - Nanowires of p- and n-type Silicon Carbide

2006 ◽  
Vol 963 ◽  
Author(s):  
Bettina Friedel ◽  
Siegmund Greulich-Weber
Keyword(s):  
Silicon Carbide ◽  
Sol Gel ◽  
Reduction Process ◽  
Atomic Ratio ◽  
Wide Bandgap ◽  
Resonance Spectroscopy ◽  
Wide Bandgap Semiconductors ◽  
Paramagnetic Resonance ◽  
Bandgap Semiconductors ◽  
Nano Wires

ABSTRACTMonocrystalline nanowires of cubic silicon carbide were synthesized using a combined sol-gel and carbothermal reduction process in which tetraethoxysilane was used as primary sili-con and sucrose as carbon source. The diameters of the as-grown nanowires varied depending on process parameters from several tens to several hundreds nanometers, whereas the length of the wires was located in the millimetre region. By precisely controlling the atomic ratio of Si / C, silicon carbide nano wires were synthesized exclusively and pure without the presence of resid-ual carbon or unwanted silica, thus leads to semi-insulating behaviour. Supported by their consis-tence the silicon carbide micro or nano wires can be processed to textile or felt structures and are therefore usable for many applications such as for fireproof clothing, high temperature or chemi-cal filters and composite materials. Additionally during sol-gel synthesis the silicon carbide mi-cro / nano wires were easily doped to achieve p- or n-conduction, guiding to new applications in the field of wide bandgap semiconductors. The structure of 3C-SiC micro and nano wires was determined using scanning electron microscopy, X-ray diffraction, nuclear magnetic resonance and fourier transform infrared spectroscopy. The electronic properties were studied using elec-tron paramagnetic resonance spectroscopy, Hall effect and current-voltage measurements.

scholarly journals Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1972 ◽  
Author(s):  
Igor A. Khramtsov ◽  
Dmitry Yu. Fedyanin
Keyword(s):  
High Speed ◽  
Semiconductor Devices ◽  
Data Communication ◽  
Wide Bandgap ◽  
Light Sources ◽  
Wide Bandgap Semiconductors ◽  
Wide Bandgap Semiconductor ◽  
Wide Range ◽  
Bandgap Semiconductors ◽  
P Type

Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors.

Power Electronic Devices and Systems Based on Bulk GaN Substrates

2018 ◽  
Vol 924 ◽  
pp. 799-804 ◽  
Author(s):  
Eric P. Carlson ◽  
Daniel W. Cunningham ◽  
Yan Zhi Xu ◽  
Isik C. Kizilyalli
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Performance Limits ◽  
Wide Bandgap Semiconductors ◽  
Power Semiconductor ◽  
Power Transistors ◽  
Wide Range ◽  
Potential Applications ◽  
Bulk Gan ◽  
Bandgap Semiconductors

Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature operation. ARPA-E’s SWITCHES program, started in 2014, set out to catalyze the development of vertical GaN devices using innovations in materials and device architectures to achieve three key aggressive targets: 1200V breakdown voltage (BV), 100A single-die diode and transistor current, and a packaged device cost of no more than ȼ10/A. The program is drawing to a close by the end of 2017 and while no individual project has yet to achieve all the targets of the program, they have made tremendous advances and technical breakthroughs in vertical device architecture and materials development. GaN crystals have been grown by the ammonothermal technique and 2-inch GaN wafers have been fabricated from them. Near theoretical, high-voltage (1700-4000V) and high current (up to 400A pulsed) vertical GaN diodes have been demonstrated along with innovative vertical GaN transistor structures capable of high voltage (800-1500V) and low RON (0.36-2.6 mΩ-cm2). The challenge of selective area doping, needed in order to move to higher voltage transistor devices has been identified. Furthermore, a roadmap has been developed that will allow high voltage/current vertical GaN devices to reach ȼ5/A to ȼ7/A, realizing functional cost parity with high voltage silicon power transistors.

scholarly journals Power electronics based on wide-bandgap semiconductors: opportunities and challenges

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Giuseppe Iannaccone ◽  
Christian Sbrana ◽  
Iacopo Morelli ◽  
Sebastiano Strangio
Keyword(s):  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors
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