Physical Vapor Transport of CuPc Organic Thin Films in High Gravity

2001 ◽  
pp. 99-106 ◽  
Author(s):  
Khasan Karimov ◽  
Stefano Bellingeri ◽  
Yoshiyuki Abe
2008 ◽  
Author(s):  
Kh. S. Karimov ◽  
S. Bellingeri ◽  
B. F. Irgaziev ◽  
I. Qazi ◽  
T. A. Khan ◽  
...  

2000 ◽  
Vol 56 (s1) ◽  
pp. s228-s228
Author(s):  
M. Ittu Zugrav ◽  
W. E. Carswell ◽  
G. B. Haulenbeek ◽  
F. C. Wessling

1994 ◽  
Vol 339 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
C. H. Carter ◽  
H. S. Kong

ABSTRACTSynchrotron white beam X-ray topography has been used to characterize defect structures in (0001) 6H-SiC substrates grown by the sublimation physical vapor transport (PVT) technique as well as in 6H-SiC epitaxial thin films grown on these substrates. Defects revealed in 6H-SiC substrates include super screw dislocations and basal plane dislocations. It has been found that back-reflection topographs are particularly suitable for imaging such super screw dislocations as well as basal plane dislocations whenever transmission topography is not applicable. Epitaxial 6H-SiC thin films grown on such (0001) substrates (tilted a few degrees towards the a-axis) were also examined by using surface sensitive grazing Bragg-Laue topography. It has been shown that super screw dislocations were replicated in the epitaxial thin films but no basal plane dislocations were revealed in the thin films. Results from various topographic techniques are discussed.


2015 ◽  
Vol 154 ◽  
pp. 100-106 ◽  
Author(s):  
Shang-Yu Hung ◽  
Ruei-Lin Kao ◽  
Ku-Yen Lin ◽  
Chun-Chuen Yang ◽  
Kuen-Song Lin ◽  
...  

2020 ◽  
Vol 13 (4) ◽  
pp. 866-872
Author(s):  
HAO Ya-ru ◽  
◽  
◽  
DENG Zhao-qi

2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document