On Physical Vapor Deposition of CuPc Organic Thin Films in High Gravity

2008 ◽  
Author(s):  
Kh. S. Karimov ◽  
S. Bellingeri ◽  
B. F. Irgaziev ◽  
I. Qazi ◽  
T. A. Khan ◽  
...  
RSC Advances ◽  
2016 ◽  
Vol 6 (56) ◽  
pp. 50770-50775 ◽  
Author(s):  
Tianjun Liu ◽  
Jiawei Wang ◽  
Liang Wang ◽  
Jing Wang ◽  
Jingbo Lan ◽  
...  

We report the observation of a screw-dislocation-driven spiral growth of DMDPC organic thin films. The existence of screw dislocations was clearly confirmed by the observations of outcropped stepsand spiral fringes.


Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7247
Author(s):  
Youngkwan Yoon ◽  
Jinho Lee ◽  
Seulgi Lee ◽  
Soyoung Kim ◽  
Hee Cheul Choi

Organic thin films with smooth surfaces are mandated for high-performance organic electronic devices. Abrupt nucleation and aggregation during film formation are two main factors that forbid smooth surfaces. Here, we report a simple fast cooling (FC) adapted physical vapor deposition (FCPVD) method to produce ultrasmooth organic thin films through effectively suppressing the aggregation of adsorbed molecules. We have found that thermal energy control is essential for the spread of molecules on a substrate by diffusion and it prohibits the unwanted nucleation of adsorbed molecules. FCPVD is employed for cooling the horizontal tube-type organic vapor deposition setup to effectively remove thermal energy applied to adsorbed molecules on a substrate. The organic thin films prepared using the FCPVD method have remarkably ultrasmooth surfaces with less than 0.4 nm root mean square (RMS) roughness on various substrates, even in a low vacuum, which is highly comparable to the ones prepared using conventional high-vacuum deposition methods. Our results provide a deeper understanding of the role of thermal energy employed to substrates during organic film growth using the PVD process and pave the way for cost-effective and high-performance organic devices.


2018 ◽  
Vol 2 (1) ◽  
pp. 586-597 ◽  
Author(s):  
Tianxing Ma ◽  
Michael P. Nitzsche ◽  
Arielle R. Gamboa ◽  
Valeria Saro-Cortes ◽  
Jonathan P. Singer

2012 ◽  
Vol 177 (1) ◽  
pp. 117-120 ◽  
Author(s):  
J.Q. Xu ◽  
T. Mori ◽  
Y. Bando ◽  
D. Golberg ◽  
D. Berthebaud ◽  
...  

2021 ◽  
Author(s):  
J. Cruz-Gomez ◽  
E. Hernandez-Cantero ◽  
D. Santos-Cruz ◽  
S.A. Mayen-Hernandez ◽  
F. DeMoure-Flores ◽  
...  

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.


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