The Influence of Membrane Patch Isolation on Single Acetylcholine-Channel Current in Rat Myotubes

1983 ◽  
pp. 473-480 ◽  
Author(s):  
Alain Trautmann ◽  
Steven A. Siegelbaum
1994 ◽  
Vol 71 (2) ◽  
pp. 814-816 ◽  
Author(s):  
J. J. Wagner ◽  
B. E. Alger

1. Whole-cell voltage-clamp recordings were obtained from CA1 neurons acutely dissociated from rat hippocampus to study the effects of guanosine 5'-triphosphate (GTP) on the gradual increase in Ca2+ channel current amplitude that takes place over several minutes after breaking in to whole-cell mode ("run-up"). 2. Including GTP (500 microM) in the patch pipette significantly prolonged the duration of run-up of peak Ca2+ channel current to its maximum value compared with controls without GTP when the recording solutions contained Ca2+. On the other hand, GTP significantly enhanced run-up when Mg2+ and Ba2+ were substituted for intracellular and extracellular Ca2+, respectively. 3. The enhancement of run-up of the current in the Mg/Ba condition appeared to be due both to an initial increase in current amplitude that was complete within 30 s after break in and to a more rapid initial rate of run-up when compared with the Ca2+ condition. GTP did not affect the absolute maximum amplitudes of the currents in either Ca2+ or Ba2+ conditions. 4. We conclude that an early GTP-dependent modulation of Ca2+ channel current is qualitatively altered, depending on whether Ca2+ or Ba2+ is used as the charge carrier. Evidence of this modulation is apparent within seconds after rupture of the membrane patch. Conceivably, influences occurring during the period of "equilibration" with electrode contents could alter subsequent regulatory steps.


Author(s):  
F. Sachs ◽  
M. J. Song

Cellular electrophysiology has been revolutionized by the introduction of patch clamp techniques. The patch clamp records current from a small patch of the cell membrane which has been sucked into a glass pipette. The membrane patch, a few micons in diameter, is attached to the glass by a seal which is electrically, diffusionally and mechanically tight. Because of the tight electrical seal, the noise level is low enough to record the activity of single ion channels over a time scale extending from 10μs to days. However, although the patch technique is over ten years old, the patch structure is unknown. The patch is inside a glass pipette where it has been impossible to see with standard electron microscopes. We show here that at 1 Mev the glass pipette is transparent and the membrane within can be seen with a resolution of about 30 A.


2001 ◽  
Vol 430 (2-3) ◽  
pp. 149-157 ◽  
Author(s):  
Satoru Kobayashi ◽  
Yoshie Reien ◽  
Takehiko Ogura ◽  
Toshihiro Saito ◽  
Yoshiaki Masuda ◽  
...  

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Katherine M. Marsh ◽  
Alice S. Ferng ◽  
Tia Pilikian ◽  
Ankit A. Desai ◽  
Ryan Avery ◽  
...  

2020 ◽  
Vol 182 ◽  
pp. 114263
Author(s):  
F. Fusi ◽  
P. Mugnai ◽  
A. Trezza ◽  
O. Spiga ◽  
G. Sgaragli

1991 ◽  
Vol 241 ◽  
Author(s):  
L.-W. Yin ◽  
J. Ibbetson ◽  
M. M. Hashemi ◽  
W. Jiang ◽  
S.-Y. Hu ◽  
...  

ABSTRACTDC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.


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