The Critical Behaviour of Ferroelectric Triglycineselenate Investigated with the X-Ray Double Crystal Diffractometer Amadeus

1981 ◽  
pp. 149-156 ◽  
Author(s):  
K. H. Ehses ◽  
H. Wern ◽  
W. Schildkamp
Keyword(s):  
Critical Behaviour ◽  
Double Crystal ◽  
X Ray ◽  
Double Crystal Diffractometer

Defect structure analysis of polycrystalline materials by computer-controlled double-crystal diffractometer with position-sensitive detector

1983 ◽  
Vol 16 (1) ◽  
pp. 89-95 ◽  
Author(s):  
R. Yazici ◽  
W. Mayo ◽  
T. Takemoto ◽  
S. Weissmann
Keyword(s):  
Position Sensitive Detector ◽  
Polycrystalline Materials ◽  
Sensitive Detector ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Local Lattice ◽  
Position Sensitive ◽  
The Individual ◽  
Double Crystal Diffractometer

The method represents an extension of a previously developed X-ray double-crystal diffractometer method when a film was used to record the crystallite reflections, each reflecting crystallite being regarded as the second crystal of a double-crystal diffractometer. By utilizing a position-sensitive detector (PSD) with interactive computer controls, the tedious and limiting task of data acquisition and analysis is greatly simplified. The specimen is irradiated with crystal-monochromated radiation and the numerous microscopic spots emanating from the reflecting crystallites are recorded separately by the position-sensitive detector and its associated multichannel analyzer at each increment of specimen rotation. An on-line minicomputer simultaneously collects these data and applies the necessary corrections. This process is then automatically repeated through the full rocking-curve range. The computer carries out the rocking-curve analysis of the individual crystallite reflections as well as that of the entire reflecting crystallite population. The instrument is provided with a specimen translation device which permits analysis of large sections of solid specimens. Thus, sites of local lattice defects induced either mechanically, chemically or by radiation can rapidly be established and quantitatively determined in terms of rocking-curve parameters as well as imaged by X-ray topography, by inserting a film in front of the PSD. The versatility and usefulness of the method is demonstrated by examples given from studies of fracture, fatigue and stress-corrosion cracking of commercial alloys.

Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 82 ◽  
Author(s):  
T. S. Ananthanarayanan ◽  
R. G. Rosemeier ◽  
W. E. Mayo ◽  
J. H. Dinan
Keyword(s):  
Bragg Reflection ◽  
Strain Tensor ◽  
Epitaxial Films ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Density Maps ◽  
First Time ◽  
Considerable Body ◽  
Double Crystal Diffractometer

SUMMARYThere is a considerable body of work available illustrating the significance of X-ray rocking curve measurements in micro-electronic applications. For the first time a high resolution (100-150µm) 2-dimensional technique called DARC (Digital Autcmated Rocking Curve) topography has been implemented. This method is an enhancement of the conventional double crystal diffractometer using a real time 2-dimensional X-ray detector.Several materials have been successfully examined using DARC topography. Same of these include: Si, GaAs, AlGaAs, InGaAs, HgMnTe, Al, Inconel, steels, etc. By choosing the appropriate Bragg reflection multi-layered micro-electronic structures have been analyzed nondestructively. Several epitaxial films, including HgCdTe and ZnCdTe, grown by molecular beam epitaxy, have also been characterized using iARC topography. The rocking curve half width maps can be translated to dislocation density maps with relative ease. This technique also allows the deconvolution of the micro-plastic lattice strain ccaponent from the total strain tensor.

X-Ray Double Crystal Diffractometer Investigations of Implanted Silicon: D+And N+

1971 ◽  
Vol 15 ◽  
pp. 504-515 ◽  
Author(s):  
E. H. teKaat ◽  
G. H. Schwuttke
Keyword(s):  
Radiation Damage ◽  
Lattice Parameter ◽  
Double Peak ◽  
Double Crystal ◽  
X Ray ◽  
Projected Range ◽  
Insight Into ◽  
Double Crystal Diffractometer

Double crystal diffractometer measurements on silicon bombarded to a fluence >1016ions/cm2with 1 MeV deuterium and 2 MeV nitrogen are reported. Such measurements provide insight into radiation damage in silicon through the observation of Bragg case pendelloesung fringes and double peak rocking curves. Bragg case pendelloesung fringes are used to determine nondestructively the projected range of ions in silicon. Double peak rocking curves are used to measure changes in lattice parameter with the ion dose. Finally, a model of radiation damage in silicon is presented.

Thickness Measurement of Epitaxical Thin Films by X-ray Diffraction Method

1988 ◽  
Vol 32 ◽  
pp. 279-284
Author(s):  
J. Chaudhuri ◽  
S. Shah ◽  
J.P. Harbison
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Electronic Materials ◽  
Diffraction Method ◽  
Thickness Measurement ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Kinematical Theory ◽  
Double Crystal Diffractometer

AbstractA method was described for determining the thickness of epitaxical thin films common to electronic materials. The equations were developed based on the kinematical theory of X-ray diffraction and effects of both primary and secondary extinctions were considered. As an example of the applications of this method, thickness measurement of AlGaAs thin films on GaAs was demonstrated. These films were grown by molecular beam epitaxy. The integrated reflected intensities from the film and the substrate were obtained by the X-ray double crystal diffractometer. An excellent agreement was obtained between the results from X-ray measurements and RHEED oscillation data.

Fine-rotation attachment to standard goniometers

2004 ◽  
Vol 37 (1) ◽  
pp. 62-66 ◽  
Author(s):  
P. Suortti ◽  
J. Keyriläinen ◽  
M. Fernández
Keyword(s):  
Torsion Angle ◽  
Rotation Angle ◽  
Linear Actuator ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Fine Focus ◽  
New Type ◽  
Rotation Stage ◽  
Double Crystal Diffractometer

A new type of fine-rotation stage has been constructed and tested. It can be attached to standard goniometers used in X-ray and neutron crystallography. The device consists of a shaft and a bar that is fitted tightly to a hole traversing the shaft. The diameter of the shaft is 5 to 10 times larger than the diameter of the bar and the length of the bar is about 5 times larger than the height of the shaft. The bottom of the shaft is attached to the top plate of the goniometer and a goniometer head can be fitted to the other end of the shaft. The free end of the bar is pushed tangentially by a linear actuator to produce a torsion moment at the shaft. The dimensions and materials of the prototype were chosen such that a 1 mm bend of the bar corresponded to a torsion angle of the shaft of about 20 µrad. The rotation angle was measured using a double-crystal diffractometer in the non-dispersive setting, with MoKα1radiation from a fine-focus X-ray tube. Accurately known angular deviations were produced by refraction in a prism and the shifts in the rocking-curve position were measured. The measured torsion angle agreed within 4% with the value calculated from the elastic constants and dimensions of the device. The repeatability of the angle was ±20 nrad (0.004 arcsec).

Ion-Beam Synthesis of Buried Yttrium Silicide

1989 ◽  
Vol 157 ◽  
Author(s):  
T.L. Alford ◽  
J.C. Barbour
Keyword(s):  
Single Crystal ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
High Fluence ◽  
Uniform Thickness ◽  
Double Crystal ◽  
X Ray ◽  
Continuous Layer ◽  
Double Crystal Diffractometer

ABSTRACTBuried single-crystal YSi1.7 layers have been synthesized using high fluence implants of 330 keV yttrium ions into (111) Si held at 450°C followed by post-implant anneals of 1000°C . Rutherford backscattering spectrometry showed that an implant fluence of 3.6 X 1017 Y/cm2 forms a continuous layer of uniform thickness. Whereas, implant fluences of 1 — 2 x 1017 Y/cm2 form a thin continuous YSi1.7 layer with what are believed to be Y-silicide precipitates above and below the YSi1.7 layer. Strains resulting from the YSi1-7 layers were evaluated from x-ray rocking curves using a double crystal diffractometer.

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