In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy

Author(s):  
I. Bozovic ◽  
J. N. Eckstein ◽  
D. G. Schlom ◽  
J. S. Harris
1991 ◽  
pp. 1085-1088 ◽  
Author(s):  
Shigeki Sakai ◽  
Yuji Kasai ◽  
Shunsuke Hosokawa ◽  
Shingo Ichimura

2010 ◽  
Vol 97 (4) ◽  
pp. 042509 ◽  
Author(s):  
T. Kawaguchi ◽  
H. Uemura ◽  
T. Ohno ◽  
M. Tabuchi ◽  
T. Ujihara ◽  
...  

1991 ◽  
pp. 1081-1084
Author(s):  
Ichiro Tsukada ◽  
Yoshimi Nakayama ◽  
Hiroshi Watanabe ◽  
Ichiro Terasaki ◽  
Atsutaka Maeda ◽  
...  

2002 ◽  
Vol 80 (19) ◽  
pp. 3563-3565 ◽  
Author(s):  
W. Jo ◽  
J-U. Huh ◽  
T. Ohnishi ◽  
A. F. Marshall ◽  
M. R. Beasley ◽  
...  

1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima

1976 ◽  
Vol 15 (6) ◽  
pp. 1001-1007 ◽  
Author(s):  
Takafumi Yao ◽  
Satoru Amano ◽  
Yunosuke Makita ◽  
Shigeru Maekawa

1989 ◽  
Vol 160 ◽  
Author(s):  
R.P. Burns ◽  
Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.


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