Relaxation of Impurity-Defect Complexes in Fluorite Crystals

1974 ◽  
pp. 15-26 ◽  
Author(s):  
J. H. Crawford ◽  
E. L. Kitts
Keyword(s):  
Defect Complexes ◽  
Impurity Defect

A Theoretical Study of p-Type Doping of ZnO: Problems and Solutions

2001 ◽  
Vol 666 ◽  
Author(s):  
Yanfa Yan ◽  
S.B. Zhang ◽  
S.J. Pennycook ◽  
S.T. Pantelides
Keyword(s):  
Total Energy ◽  
First Principles ◽  
Theoretical Study ◽  
Energy Calculations ◽  
Defect Complexes ◽  
New Approaches ◽  
Impurity Defect ◽  
Problems And Solutions ◽  
P Type ◽  
Made In

ABSTRACTWe present results of a comprehensive set of first-principles total-energy calculations of native and impurity-defect complexes in ZnO and use these results to elucidate the problems that occur in efforts to achieve p-type doping. The analysis naturally leads to new approaches that are likely to overcome the difficulties. The results provide detailed explanations of recent puzzling observations made in attempts to produce p-type ZnO.

Impurity-defect complexes and doping mechanism ina-Si:H

1991 ◽  
Vol 66 (25) ◽  
pp. 3273-3276 ◽  
Author(s):  
L. H. Yang ◽  
C. Y. Fong ◽  
C. S. Nichols
Keyword(s):  
Defect Complexes ◽  
Impurity Defect ◽  
Doping Mechanism

Study of Vacancy and Impurity Complexes in Si Solid-Phase Epitaxial Crystallization with Positron Annihilation Spectroscopy

2000 ◽  
Vol 610 ◽  
Author(s):  
Claudine M. Chen ◽  
Stefano Rassiga ◽  
Marc H. Weber ◽  
Mihail P. Petkov ◽  
Kelvin G. Lynn ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Solid Phase ◽  
Positron Annihilation Spectroscopy ◽  
Vacancy Defect ◽  
Silicon Substrates ◽  
Time Resolved ◽  
Defect Complexes ◽  
Impurity Defect ◽  
Boron Ions ◽  
Doping Profiles

AbstractWe investigate the residual vacancy defect species after crystallization of amorphous Si (a-Si) by solid phase epitaxy (SPE). To this end, we correlate the total and electronically-active doping concentrations measured by secondary mass spectrometry and spreading resistance analysis, and data from positron annihilation spectroscopy (PAS), which is sensitive to openvolume defects. Float-zone silicon substrates were implanted with boron, phosphorus and both phosphorus and boron ions to create nonuniform doping profiles at degenerate doping levels, after an amorphization step by 29Si+ ions. Samples were vacuum annealed at 600°C to induce SPE, and the SPE rate was measured by time-resolved reflectivity. PAS was used for identification of the impurity-defect complexes. Momentum-resolved PAS measurements enable the detection of phosphorus-vacancy (P-V) and oxygen-vacancy (O-V) complexes.

scholarly journals Impurity-Defect Complexes in Hydrogenated Amorphous Silicon

1990 ◽  
Vol 209 ◽  
Author(s):  
Lin H. Yang ◽  
C. Y. Fong ◽  
Carol S. Nichols
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bond ◽  
Defect Complexes ◽  
Amorphous Network ◽  
Pseudopotential Calculations ◽  
Impurity Defect ◽  
Supercell Model ◽  
Hydrogenated Amorphous

ABSTRACTThe two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H) - a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping - have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using firstprinciples self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results, we have studied the electronic and structural properties of substitutional fourfoldcoordinated phosphorus and boron at the second neighbor position to a dangling bond defect. We demonstrate that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H.

Mechanical properties and dislocation dynamics of GaP

1989 ◽  
Vol 4 (2) ◽  
pp. 355-360 ◽  
Author(s):  
Ichiro Yonenaga ◽  
Koji Sumino
Keyword(s):  
Mechanical Properties ◽  
Dislocation Dynamics ◽  
Dynamic State ◽  
Strain Rates ◽  
Compression Tests ◽  
Stress Strain ◽  
Temperature Range ◽  
Strain Behavior ◽  
Defect Complexes ◽  
Impurity Defect

Mechanical properties of GaP crystals are investigated in the temperature range 600–900 °C by means of compression tests. Stress-strain characteristics of a GaP crystal in the temperature range 600–800 °C are very similar to those of a GaAs crystal in the temperature range 450–600 °C. The dynamic state of dislocations during deformation is determined by means of the strain-rate cycling technique. The deformation of GaP is found to be controlled by the dislocation processes the same as those in other kinds of semiconductors such as Si, Ge, and GaAs. The velocity v of dislocations that control deformation is deduced to be v = v0 τ exp(–2.2 eV/kT) as a function of the stress τ and the temperature T, where v0 is a constant and k the Boltzmann constant. The Portevin-LeChatelier effect is observed in the stress-strain behavior in the deformation at high temperatures and under low strain rates, which may be attributed to the locking of dislocations by impurities or impurity-defect complexes.

Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals

1995 ◽  
Vol 196-201 ◽  
pp. 1413-1418
Author(s):  
V.A. Bykov ◽  
N.I. Dolgikh ◽  
Valentin V. Emtsev ◽  
Eugene E. Haller ◽  
V.I. Hitko ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Defect Complexes ◽  
Impurity Defect ◽  
Neutron Transmutation

Impurity-defect complexes in non-implanted aluminum

1986 ◽  
Vol 29 (1-4) ◽  
pp. 1241-1244 ◽  
Author(s):  
F. T. Pedersen ◽  
H. Grann ◽  
G. Weyer
Keyword(s):  
Defect Complexes ◽  
Impurity Defect

The Role of Vacancies and Dopants in Si Solid-Phase Epitaxial Crystallization

1999 ◽  
Vol 557 ◽  
Author(s):  
C. M. Chen ◽  
S. Rassiga ◽  
T. Gessmann ◽  
M. P. Petkov ◽  
M. H. Weber ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Vacancy Concentration ◽  
Positron Annihilation Spectroscopy ◽  
Doping Profile ◽  
Solid Phase Epitaxy ◽  
Time Resolved ◽  
Defect Complexes ◽  
Impurity Defect ◽  
Phosphorus Doped

AbstractThe role and interaction of vacancies and dopants in the crystallization of amorphous Si (a-Si) by solid-phase epitaxy (SPE) was investigated. To this end, we studied: (i) the solid-phase epitaxy rate measured by time-resolved reflectivity (TRR), (ii) the dopant and carrier concentrations measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR) analysis, and (iii) the vacancy concentration measured by positron annihilation spectroscopy (PAS). Phosphorus was implanted into a-Si on Si (001), which was previously amorphized by 29Si+ implantation, to create a nonuniform P doping profile. Phosphorus doped samples compensated with a similar boron profile were also studied. Samples were vacuum annealed for various times so that the amorphous-crystal interface was stopped at various depths providing frozen frames of the SPE process. These samples were then studied with PAS to investigate the vacancy population and to identify the impurity-defect complexes. Using this method, we have observed a population of phosphorus-vacancy complexes in the epitaxial layer.

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