Optical Probing of Resonant Ultrasonic Scattering from Machined Flaws in Plates

Optical probing of millimetre waves in semiconductor waveguides

IEE Proceedings H Microwaves Antennas and Propagation ◽

10.1049/ip-h-2.1991.0077 ◽

1991 ◽

Vol 138 (5) ◽

pp. 460 ◽

Cited By ~ 2

Author(s):

A. Alphones ◽

M. Tsutsumi

Keyword(s):

Semiconductor Waveguides ◽

Millimetre Waves ◽

Optical Probing

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Novel Failure Analysis Sample Preparation Techniques for PoP Packaging

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0578 ◽

2012 ◽

Author(s):

Ng Sea Chooi ◽

Chor Theam Hock ◽

Ma Choo Thye ◽

Khoo Poh Tshin ◽

Dan Bockelman

Keyword(s):

Sample Preparation ◽

Failure Analysis ◽

Failure Mechanisms ◽

Preparation Process ◽

Space Saving ◽

Optical Probing ◽

Preparation Techniques

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.

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Case Study of Electro-Optical Probing Signal with High Signal-Noise Ratio

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0123 ◽

2019 ◽

Author(s):

Ryan Xiao ◽

William Wang ◽

Ang Li ◽

Shengqiu Xu ◽

Binghai Liu

Keyword(s):

Failure Mode ◽

High Signal ◽

Signal Noise ◽

Electrical Failure ◽

Current Path ◽

Probing Signal ◽

Optical Probing ◽

Noise Ratio ◽

Case Collection

Abstract With the development of semiconductor technology and the increment quantity of metal layers in past few years, backside EFA (Electrical Failure Analysis) technology has become the dominant method. In this paper, abnormally high Signal Noise Ratio (SNR) signal captured by Electro-Optical Probing (EOP)/Laser Voltage Probing (LVP) from backside is shown and the cause of these phenomena are studied. Based on the real case collection, two kinds of failure mode are summarized, and simulated experiments are performed. The results indicate that when a current path from power to ground is formed, the high SNR signal can be captured at the transistor which was on this current path. It is helpful of this consequence for FA to identify the failure mode by high SNR signal.

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VIS-NIR LED Illumination in Backside Circuit Edit and Optical Probing Applications

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0505 ◽

2012 ◽

Author(s):

Shida Tan ◽

Richard H. Livengood ◽

Dane Scott ◽

Roy Hallstein ◽

Pat Pardy ◽

...

Keyword(s):

High Resolution ◽

Image Quality ◽

Optical Imaging ◽

Narrow Band ◽

Light Emitting Diode ◽

Air Gap ◽

Optical Image ◽

Proof Of Concept ◽

Light Emitting ◽

Optical Probing

Abstract High resolution optical imaging is critical in assisting backside circuit edit (CE) and optical probing navigation. In this paper, we demonstrated improved optical image quality using VIS-NIR narrow band light emitting diode (LED) illumination in various FIB and optical probing platforms. The proof of concept was demonstrated with both common non-contact air gap lenses and solid immersion lenses (SIL).

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