Novel Failure Analysis Sample Preparation Techniques for PoP Packaging

2012 ◽  
Author(s):  
Ng Sea Chooi ◽  
Chor Theam Hock ◽  
Ma Choo Thye ◽  
Khoo Poh Tshin ◽  
Dan Bockelman
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanisms ◽  
Preparation Process ◽  
Space Saving ◽  
Optical Probing ◽  
Preparation Techniques

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.

Failure Analysis of Flip Chip C4 Package Using Focused Ion Beam Milling Technique

2011 ◽  
Author(s):  
Lihong Cao ◽  
Loc Tran ◽  
Wallace Donna
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Sections ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Failure Mechanisms ◽  
Organic Substrate ◽  
Dual Beam ◽  
Preparation Techniques

Abstract This article describes how Focused Ion Beam (FIB) milling methodology enhances the capability of package-level failure analysis on flip-chip packages by eliminating the artifacts induced by using conventional mechanical techniques. Dual- Beam Focused Ion Beam (DB FIB) cross sections were successful in detecting failure mechanisms related either to the die/C4 bump or package defect inside the organic substrate. This paper outlines detailed sample preparation techniques prior to performing the DB FIB cross-sections, along with case studies of DB FIB cross-sections.

Sample Preparation Challenges In WLCSP Epoxy Underfill Coating Removal

2012 ◽  
Author(s):  
Jason H. Lagar ◽  
Rudolf A. Sia
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Vital Role ◽  
Fault Isolation ◽  
Wafer Level ◽  
Chip Scale Package ◽  
Coating Removal ◽  
Customer Returns ◽  
Preparation Techniques ◽  
Mechanical Defect

Abstract Most Wafer Level Chip Scale Package (WLCSP) units returned by customers for failure analysis are mounted on PCB modules with an epoxy underfill coating. The biggest challenge in failure analysis is the sample preparation to remove the WLCSP device from the PCB without inducing any mechanical defect. This includes the removal of the underfill material to enable further electrical verification and fault isolation analysis. This paper discusses the evaluations conducted in establishing the WLCSP demounting process and removal of the epoxy underfill coating. Combinations of different sample preparation techniques and physical failure analysis steps were evaluated. The established process enabled the electrical verification, fault isolation and further destructive analysis of WLCSP customer returns mounted on PCB and with an epoxy underfill coating material. This paper will also showcase some actual full failure analysis of WLCSP customer returns where the established process played a vital role in finding the failure mechanism.

Comparison of Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis

1997 ◽  
Vol 3 (S2) ◽  
pp. 357-358
Author(s):  
C. Amy Hunt
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mechanical Polishing ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Tem Analysis ◽  
The Past ◽  
Preparation Techniques

The demand for TEM analysis in semiconductor failure analysis is rising sharply due to the shrinking size of devices. A well-prepared sample is a necessity for getting meaningful results. In the past decades, a significant amount of effort has been invested in improving sample preparation techniques for TEM specimens, especially precision cross-sectioning techniques. The most common methods of preparation are mechanical dimpling & ion milling, focused ion beam milling (FIBXTEM), and wedge mechanical polishing. Each precision XTEM technique has important advantages and limitations that must be considered for each sample.The concept for both dimpling & ion milling and wedge specimen preparation techniques is similar. Both techniques utilize mechanical polishing to remove the majority of the unwanted material, followed by ion milling to assist in final polishing or cleaning. Dimpling & ion milling produces the highest quality samples and is a relatively easy technique to master.

Guidelines for Two-Dimensional Dopant Profiling Using Scanning Capacitance Microscopy

2000 ◽  
Author(s):  
Axel Born ◽  
R. Wiesendanger
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Edge Effects ◽  
Two Dimensional ◽  
Stray Capacitance ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
3D Geometry ◽  
Cv Measurements ◽  
Preparation Techniques

Abstract This paper provides guidance and insights on the use of scanning capacitance microscopy (SCM) in semiconductor failure analysis. It explains why SCM systems are constrained by rigid performance tradeoffs and how CV measurements are affected by large stray capacitance and as well as edge effects associated with the 3D geometry of the sample and probe. It also explains how samples should be prepared and how proper sample preparation techniques combined with optimally selected voltages make it possible to accurately determine doping concentrations, even in p-n junctions.

The Challenge and Methods of TEM Cross-Sectioning of < 0.25 Micron Plugs

1998 ◽  
Vol 523 ◽  
Author(s):  
C. Amy Hunt ◽  
Yuhong Zhang ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Adhesion Layer ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Sectional Plane ◽  
Preparation Techniques

AbstractTransmission electron microscopy (TEM) is a useful tool in process evaluation and failure analysis for semiconductor industries. A common focus of semiconductor TEM analyses is metalization vias (plugs) and it is often desirable to cross-section through a particular one. If the cross-sectional plane deviates away from the center of the plug, then the thin adhesion layer around the plug will be blurred by surrounding materials such as the inter-layer dielectric and the plug material. The importance of these constraints, along with the difficulty of precision sample preparation, has risen sharply as feature sizes have fallen to 0.25 μm and below. The suitability of common sample preparation techniques for these samples is evaluated.

Contact Leakage Failure Analysis by EBIC, C-AFM and Nano-probing

2019 ◽  
Author(s):  
Kuang-Tse Ho ◽  
Chien-Wei Wu ◽  
Te-Fu Chang ◽  
Chia-Hsiang Yen ◽  
Ching-Hsiang Chan
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Isolation ◽  
Electrical Failure ◽  
Sem And Tem ◽  
Leakage Failure

Abstract This research sets up failure analysis flow to verify failure mechanisms and root causes of different kinds of contact leakage. This flow mainly uses EBIC, C-AFM and nano-probing to do fault isolation and confirm electrical failure mechanisms. Appropriate sample preparation is also mandatory for FIB, SEM and TEM inspection.

Sample Preparation Techniques for Reduced Lateral Heat Distribution and Implications for Non-IR Probing on Integrated Circuits

2017 ◽  
Author(s):  
Matthew M. Mulholland ◽  
Vladimir V. Vlasyuk ◽  
Robert P. Wadell ◽  
Imran Khan ◽  
Nathan J. Bakken
Keyword(s):  
Sample Preparation ◽  
Product Life Cycle ◽  
Junction Temperature ◽  
Visible Range ◽  
Heat Distribution ◽  
Solid Immersion Lens ◽  
Optical Probing ◽  
Silicon Thickness ◽  
Preparation Techniques ◽  
Lateral Heat

Abstract Validation techniques on packaged integrated circuit (IC) samples positively impact time to market (TTM) by saving considerable fabrication modification turnaround time and costs. The validation techniques are typically done by working through the backside of the chip. These validation and debug techniques, such as optical probing, use the Solid Immersion Lens (SIL) for imaging and data collection. Solid Immersion Lens based near infrared (NIR) optical probing systems have been an integral function in the product life cycle enabling a fast, reliable, and low defect product to market. For the SIL configuration, the remaining silicon thickness (RST) target is specified to be 50 +/- 5um. The sample preparation tools and techniques to accomplish this have been fully developed and matured enough to provide this specification for all segment form factors. This silicon thickness is also within a sustainable thermal envelope at certain power densities during debug electrical testing and validation. As we move into the next generation of optical probing debug in the visible range, increasing resolution further, new sample preparation methods need to be developed. There are a number of different strategies and techniques to prepare the sample, while also enabling efficient heat transfer. This paper will detail some of the sample preparation techniques as a function of silicon thickness and aspect ratio. These final geometries will then be characterized thermally by investigating lateral heat distribution and junction temperature within the silicon Region of Interest (ROI). Finally, based on this sample preparation and thermal study, implications around debug techniques for optical probing will be discussed.

Doping Mapping by SSRM–Reaching Maturity and Sub-10nm Resolution

2004 ◽  
Author(s):  
Stephan Schömann ◽  
David Álvarez
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Development Stage ◽  
Advanced Technology ◽  
Device Performance ◽  
Major Step ◽  
Spreading Resistance ◽  
And Performance ◽  
Preparation Techniques ◽  
Complex Doping

Abstract For years there has been a discrepancy between the importance of complex doping implantation schemes for advanced technology device performance and the ability to accurately measure the carrier concentrations with the gap widening at each technology node. With scanning spreading resistance Microscopy (SSRM) a major step forward in terms of resolution and quantification was achieved especially since the emergence of full diamond tip manufacturability and improvements in sample preparation techniques. This article discusses the non-trivial prerequisites for this success and some examples from the failure analysis routine that show the promising capabilities of SSRM. The examples include technology monitoring and failure analysis in SOI transistors and vertical surrounded gate transistors, as well as failure analysis on yield and performance issues. SSRM has reached a development stage that allows its application as routine tool for 2D-carrier profiling.

Case Studies on Application of Electro Optical Probing (EOP) - A Noninvasive Backside Localization Technique in Failure Analysis

2019 ◽  
Author(s):  
Srinath Rajaram ◽  
Rajesh Kabadi ◽  
Eric Barbian
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Case Studies ◽  
Fault Localization ◽  
Localization Technique ◽  
Localize Failure ◽  
Advanced Packaging ◽  
Optical Probing ◽  
Deposition Techniques ◽  
No Sample Preparation

Abstract Given the challenges FA Engineers have in fault localization, top-side analysis is facing a major challenge with today’s advanced packaging and shrinking of die sizes. At wafer and die level it is relatively easy to probe with little or no sample preparation. Greater challenges occur after the die is packaged. The difficulty further lies in non-destructively analyzing the die. Another issue with failure analysis is accurately deprocessing the device for probe pad deposition. Techniques like Electro Optical Probing (EOP) or Laser Voltage Probing (LVP) acquire electrical signals on transistors and create an activity map of the circuitry. In failure analysis, it is applied to localize defects. This paper discusses integrating EOP techniques in traditional FA to localize failure in mixed signal ICs. Three case studies were presented in this paper to establish the technique to be effective, quick and easy to probe non-invasively with minimal backside sample preparation.

CMOS Backside Deprocessing With TMAH / IPA as a Sample Preparation Procedure for Failure Analysis

2002 ◽  
Author(s):  
Seth Prejean ◽  
Victoria Bruce ◽  
Joyce Burke
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Process Development ◽  
Future Research ◽  
Cmos Process ◽  
Preparation Technique ◽  
Root Cause ◽  
Sample Preparation Procedure ◽  
Root Cause Failure Analysis ◽  
Preparation Techniques

Abstract This paper is about a sample preparation technique that is based on a previous research publication1. The technique was initially used for the investigation of salicide formation for CMOS process development. The initial results were very good and proved to be helpful with root cause failure analysis. Once the technique proved to be a viable failure analysis (FA) tool, a research team was formed to continue the development. This paper is written in conjunction with this team. The team is presently focused on developing a repeatable and reliable methodology of deprocessing CMOS devices from the backside. The team is also developing a methodology for post deprocessing analysis once the backside silicon is removed. The research that is presented here focuses on packaged as well as unpackaged devices. Etch rates and selectivity of tetramethylammoniumhydroxide (TMAH) is investigated along with temperature dependencies. Package material and chemical interference issues were discovered and remedied with special preparation techniques. Post deprocessing analysis is considered and many ideas are proposed as part of future research.

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