Isochronal Annealing of Resistivity in Float Zone and Czochralski NTD Silicon

1979 ◽  
pp. 291-305 ◽  
Author(s):  
Paul J. Glairon ◽  
J. M. Meese
Keyword(s):  
Isochronal Annealing ◽  
Float Zone

Examination of Extra Electron Diffraction Spots Observed in Deuterium-Irradiated Silicon by Using Parallel Electron Beam Illumination

1990 ◽  
Vol 48 (2) ◽  
pp. 490-491
Author(s):  
Ryuichiro Oshima ◽  
Shoichiro Honda ◽  
Tetsuo Tanabe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Single Crystal ◽  
Mixed Solution ◽  
Parallel Beam ◽  
Defect Clusters ◽  
Float Zone ◽  
Transmission Electron ◽  
Extra Electron ◽  
Diffraction Patterns

In order to examine the origin of extra diffraction spots and streaks observed in selected area diffraction patterns of deuterium irradiated silicon, systematic diffraction experiments have been carried out by using parallel beam illumination.Disc specimens 3mm in diameter and 0.5mm thick were prepared from a float zone silicon single crystal(B doped, 7kΩm), and were chemically thinned in a mixed solution of nitric acid and hydrogen fluoride to make a small hole at the center for transmission electron microscopy. The pre-thinned samples were irradiated with deuterium ions at temperatures between 300-673K at 20keV to a dose of 1022ions/m2, and induced lattice defects were examined under a JEOL 200CX electron microscope operated at 160kV.No indication of formation of amorphous was obtained in the present experiments. Figure 1 shows an example of defects induced by irradiation at 300K with a dose of 2xl021ions/m2. A large number of defect clusters are seen in the micrograph.

Morphology and development of flow-pattern defect with extended nonagitated Secco etching

1994 ◽  
Vol 52 ◽  
pp. 868-869
Author(s):  
Y. Pan
Keyword(s):  
Flow Pattern ◽  
Silicon Crystal ◽  
Gate Oxide ◽  
Crystal Growth Rate ◽  
Etch Depth ◽  
Force Microscopy ◽  
Etch Pit ◽  
Float Zone ◽  
Atomic Force ◽  
Multiple Step

The D defect, which causes the degradation of gate oxide integrities (GOI), can be revealed by Secco etching as flow pattern defect (FPD) in both float zone (FZ) and Czochralski (Cz) silicon crystal or as crystal originated particles (COP) by a multiple-step SC-1 cleaning process. By decreasing the crystal growth rate or high temperature annealing, the FPD density can be reduced, while the D defectsize increased. During the etching, the FPD surface density and etch pit size (FPD #1) increased withthe etch depth, while the wedge shaped contours do not change their positions and curvatures (FIG.l).In this paper, with atomic force microscopy (AFM), a simple model for FPD morphology by non-crystallographic preferential etching, such as Secco etching, was established.One sample wafer (FPD #2) was Secco etched with surface removed by 4 μm (FIG.2). The cross section view shows the FPD has a circular saucer pit and the wedge contours are actually the side surfaces of a terrace structure with very small slopes. Note that the scale in z direction is purposely enhanced in the AFM images. The pit dimensions are listed in TABLE 1.

Electrical Properties of Dislocations in Plastically Deformed Float Zone Silicon

1995 ◽  
Vol 5 (9) ◽  
pp. 1327-1336 ◽  
Author(s):  
J. J. Simon ◽  
E. Yakimov ◽  
M. Pasquinelli
Keyword(s):  
Electrical Properties ◽  
Float Zone

The influence of growth rate on the microstructural and magnetic properties of float-zone grown crystals

2007 ◽  
Vol 309 (1) ◽  
pp. 119-125 ◽  
Author(s):  
S.M. Koohpayeh ◽  
J.S. Abell ◽  
K.K. Bamzai ◽  
A.I. Bevan ◽  
D. Fort ◽  
...  
Keyword(s):  
Growth Rate ◽  
Magnetic Properties ◽  
Float Zone

Intrinsic Gettering in Oxygen-Free Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
K. Nauka ◽  
J. Lagowski ◽  
H. C. Gatos
Keyword(s):  
Magnetic Field ◽  
Czochralski Silicon ◽  
Float Zone ◽  
Free Silicon

ABSTRACTWe found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon. The intrinsic gettering has been observed thus far only in oxygen-rich Czochralski silicon and it has been believed to be intimately related to oxygen. We present experimental characteristics of the new intrinsic gettering process, and we propose a model involving outdiffusion and precipitation of silicon interstitials rather than oxygen which is involved in the standard intrinsic gettering.

Float-Zone silicon crystal growth at reduced RF frequencies

2012 ◽  
Vol 360 ◽  
pp. 43-46 ◽  
Author(s):  
H.-J. Rost ◽  
R. Menzel ◽  
A. Luedge ◽  
H. Riemann
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Float Zone
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