Abnormal Grain Growth in the Presence of Grain Boundary Pinning Precipitates

2020 ◽  
pp. 519-532
Author(s):  
M. G. Fahrmann ◽  
D. A. Metzler
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
Grain Boundary Pinning

Monte-Carlo Simulation of Goss Abnormal Grain Growth in Fe-3%Si Steel by Sub-Boundary Enhanced Solid-State Wetting

2012 ◽  
Vol 715-716 ◽  
pp. 146-151
Author(s):  
K.J. Ko ◽  
A.D. Rollett ◽  
N.M. Hwang
Keyword(s):  
Monte Carlo ◽  
Solid State ◽  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Energy ◽  
Three Dimensional ◽  
Abnormal Grain Growth ◽  
Grain Boundary Energy ◽  
Simulation Based ◽  
Mc Simulation

The selective abnormal grain growth (AGG) of Goss grains in Fe-3%Si steel was investigated using a parallel Monte-Carlo (MC) simulation based on the new concept of sub-boundary enhanced solid-state wetting. Goss grains with low angle sub-boundaries will induce solid-state wetting against matrix grains with a moderate variation in grain boundary energy. Three-dimensional MC simulations of microstructure evolution with textures and grain boundary distributions matched to experimental data is using in this study.

The Effect of Variability Among Grain Boundary Energies on Grain Growth in Thin Film Strips

1994 ◽  
Vol 338 ◽  
Author(s):  
H.J. Frost ◽  
Y. Hayashi ◽  
C.V. Thompson ◽  
D.T. Walton
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Energy ◽  
Strip Width ◽  
Grain Boundary Energy ◽  
Triple Junctions ◽  
Interconnect Reliability ◽  
Bamboo Structure ◽  
Grain Boundary Pinning

ABSTRACTGrain growth in thin-film strips is important to interconnect reliability because grain boundary structures strongly effect the rate and mechanism of electromigration-induced failure. Previous simulations of this process have indicated that the transformation to the fully bamboo structure proceeds at a rate which decreases exponentially with time, and which is inversely proportional to the square of the strip width. We have also reported that grain boundary pinning due to surface grooving implies that there exists a maximum strip width to thickness ratio beyond which the transformation to the bamboo structure does not proceed to completion. In this work we have extended our simulation of grain growth in thin films and thin film strips to consider the effects of variations in grain boundary energy. Boundary energy is taken to depend on the misorientation between the two neighboring grain and the resulting variations in grain boundary energy mean that dihedral angles at triple junctions deviate from 120°. The proportionality between boundary velocities and local curvatures, and the critical curvature for boundary pinning due to surface grooving also both depend on boundary energy. In the case of thin-film strips, the effect of boundary energy variability is to impede the transformation to the bamboo structure, and reduce the width above which the complete bamboo structure is never reached. Those boundaries which do remain upon stagnation tend to be of low energy (low misorientation angle) and are therefore probably of low diffusivity, so that their impact on reliability is probably reduced.

New Understanding of Abnormal Grain Growth Approached by Solid-State Wetting along Grain Boundary or Triple Junction

2004 ◽  
Vol 467-470 ◽  
pp. 745-750 ◽  
Author(s):  
Nong Moon Hwang
Keyword(s):  
Solid State ◽  
Grain Boundary ◽  
Grain Growth ◽  
Triple Junction ◽  
Boundary Energy ◽  
Growth Front ◽  
Abnormal Grain Growth ◽  
Boundary Mobility ◽  
Grain Boundary Mobility ◽  
Mc Simulation

Although it has been generally believed that the advantage of the grain boundary mobility induces abnormal grain growth (AGG), it is suggested that the advantage of the low grain boundary energy, which favors the growth by solid-state wetting, induces AGG. Analyses based on Monte Carlo (MC) simulation show that the approach by solid-state wetting could explain AGG much better than that by grain boundary mobility. AGG by solid-state wetting is supported not only by MC simulations but also by the experimental observation of microstructure evolution near or at the growth front of abnormally growing grain. The microstructure shows island grains and solid-state wetting along grain boundary and triple junction.

Diffusion Controlled Abnormal Grain Growth in Ceramics

2007 ◽  
Vol 558-559 ◽  
pp. 1227-1236 ◽  
Author(s):  
Shen J. Dillon ◽  
Martin P. Harmer
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Growth Kinetics ◽  
Abnormal Grain Growth ◽  
Growth Theory ◽  
Diffusion Controlled ◽  
Grain Growth Kinetics ◽  
Kinetics Of

The grain growth kinetics of silica and calcia doped alumina at 1400oC and their grain boundary complexion is characterized. These data are compared to predictions of both diffusion controlled and nucleation limited interface controlled grain growth theory. It is deduced from the indicators that the mechanism for normal and abnormal grain growth in these aluminas is diffusion controlled.

Conditions for the Occurrence of Abnormal Grain Growth Studied by a 3 D Vertex Dynamics Model

2012 ◽  
Vol 715-716 ◽  
pp. 563-567 ◽  
Author(s):  
M. Syha ◽  
D. Weygand
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Energy ◽  
Mean Field ◽  
Three Dimensional ◽  
Abnormal Grain Growth ◽  
Dynamics Model ◽  
Boundary Properties ◽  
The Impact ◽  
Field Approaches

The conditions for the nucleation of abnormal grain growth were investigated using a three dimensional vertex dynamics model. Potentially abnormal growing grains characterized by their size and topological class, respectively and embedded in an isotropic grain ensemble were subjected to annealing varying their grain boundary properties. The simulation results indicate that the classical mean field approaches underestimate the role of the grain boundary energy advantage, while the impact of a mobility advantage is overestimated.

Abnormal grain growth induced by grain boundary segregation of yttrium in grain-oriented Fe-3%Si steel

2018 ◽  
Vol 146 ◽  
pp. 204-208 ◽  
Author(s):  
Hyung-Ki Park ◽  
Chan-Hee Han ◽  
Chang-Soo Park ◽  
Jong-Tae Park ◽  
Hyung-Don Joo
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Segregation ◽  
Abnormal Grain Growth ◽  
Grain Boundary Segregation

Annealing Textures of Thin Films and Copper Interconnects

2005 ◽  
Vol 475-479 ◽  
pp. 1-8 ◽  
Author(s):  
Dong Nyung Lee
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Grain Growth ◽  
Fiber Type ◽  
Boundary Energy ◽  
Boundary Surface ◽  
Strain Energy Release ◽  
Abnormal Grain Growth ◽  
Copper Interconnects ◽  
Geometric Constraints

Vapor-, electro-, and electroless-deposits have usually strong fiber textures. When annealed, the deposits undergo recrystallization or abnormal grain growth to reduce their energy stored during deposition. The driving force for recrystallization is mainly caused by dislocations, whereas that for abnormal grain growth is due to the grain boundary, surface, interface, and strain energies. During recrystallization and abnormal grain growth, the texture change can take place. The recrystallization and abnormal grain growth textures are in general of fiber type. However, copper interconnects are subjected to non-planar stress state due to geometric constraints during room temperature and/or elevated temperature annealing. The annealing textures of the thin films and copper interconnects are discussed in terms of the minimization of the surface, interface, and strain energies, the grain boundary energy and mobility, and the strain-energy-release maximization.

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