Manipulation of Single Charges Using Dopant Atoms in Silicon—Interplay with Intervalley Phonon Emission

2016 ◽  
pp. 137-141
Author(s):  
Yukinori Ono ◽  
Masahiro Hori ◽  
Gabriel P. Lansbergen ◽  
Akira Fujiwara
Keyword(s):  
Phonon Emission ◽  
Dopant Atoms

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

PHONON EMISSION CAUSED BY SUBHARMONIC GAP STRUCTURE OF SUPERCONDUCTING SN-I-SN TUNNEL JUNCTIONS

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-593-C6-594 ◽  
Author(s):  
W. Forkel ◽  
H. Schenk
Keyword(s):  
Tunnel Junctions ◽  
Phonon Emission ◽  
Gap Structure

Induced Phonon Emission in an Impurity Paramagnet Under Strong Electromagnetic Pumping

1998 ◽  
Vol 52 (1) ◽  
pp. 97-102 ◽  
Author(s):  
D. N. Makovetskii
Keyword(s):  
Phonon Emission

scholarly journals Effect of the number of nitrogen dopants on the electronic and magnetic properties of graphitic and pyridinic N-doped graphene – a density-functional study

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18371-18380
Author(s):  
Erik Bhekti Yutomo ◽  
Fatimah Arofiati Noor ◽  
Toto Winata
Keyword(s):  
Magnetic Properties ◽  
Density Functional ◽  
Functional Study ◽  
Density Functional Study ◽  
Electronic And Magnetic Properties ◽  
Doped Graphene ◽  
Dopant Atoms ◽  
Pyridinic N

The number of dopant atoms is a parameter that can effectively tune the electronic and magnetic properties of graphitic and pyridinic N-doped graphene.

scholarly journals Study of the Molecule Adsorption Process during the Molecular Doping

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1899
Author(s):  
Mattia Pizzone ◽  
Maria Grazia Grimaldi ◽  
Antonino La La Magna ◽  
Neda Rahmani ◽  
Silvia Scalese ◽  
...  
Keyword(s):  
Density Functional ◽  
Electrical Characterization ◽  
Molecular Surface ◽  
Doping Profile ◽  
Electrical Measurements ◽  
Self Assembled Monolayer ◽  
Depth Study ◽  
Molecular Doping ◽  
Dopant Atoms ◽  
Molecular Layers

Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples resides on the in-depth study of the molecule behaviour once deposited. It is already known that the molecules form a self-assembled monolayer over the surface of the sample, but little is known about the role and behaviour of possible multiple layers that could be deposited on it after extended deposition times. In this work, we investigate the molecular surface coverage over time of diethyl-propyl phosphonate on silicon, by employing high-resolution morphological and electrical characterization, and examine the effects of the post-deposition surface treatments on it. We present these data together with density functional theory simulations of the molecules–substrate system and electrical measurements of the doped samples. The results allow us to recognise a difference in the bonding types involved in the formation of the molecular layers and how these influence the final doping profile of the samples. This will improve the control on the electrical properties of MD-based devices, allowing for a finer tuning of their performance.

scholarly journals Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon

2021 ◽  
Author(s):  
Alexander Markevich ◽  
Bethany M. Hudak ◽  
Jacob Madsen ◽  
Jiaming Song ◽  
Paul C. Snijders ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dopant Atoms ◽  
Electron Beam Manipulation ◽  
Beam Manipulation

scholarly journals Lattice relaxations around individual dopant atoms in SrTiO3

2019 ◽  
Vol 3 (11) ◽  
Author(s):  
Salva Salmani-Rezaie ◽  
Honggyu Kim ◽  
Kaveh Ahadi ◽  
Susanne Stemmer
Keyword(s):  
Dopant Atoms

Phonon Decay in GaN and AlN and Self-Heating in III-N Devices

2006 ◽  
Vol 955 ◽  
Author(s):  
Mark Holtz ◽  
D. Y. Song ◽  
S. A. Nikishin ◽  
V. Soukhoveev ◽  
A. Usikov ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Temperature Dependence ◽  
High Quality ◽  
Self Heating ◽  
Phonon Emission ◽  
Decay Properties ◽  
Phonon Properties

ABSTRACTWe report studies of the temperature dependence of Raman lines in high quality GaN and AlN. The temperature dependence of the phonon energies and linewidths are used to produce consistent phonon decay properties of zone center optic phonons. In GaN we observe the E22 phonon to decay into three phonons, while the A1(LO) phonon is well described according to the so-called Ridley process – one TO and one LA phonon. For AlN the E22 phonon decays by two phonon emission and the A1(LO) line also exhibits a dependence consistent with the Ridley process. Along with the phonon decay processes, it is important in each case to take into account the contribution of the thermal expansion, including the temperature dependence, to describe observed temperature shifts in the phonon properties.

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