Deterministic Numerical Simulation of 1d Kinetic Descriptions of Bipolar Electron Devices

Author(s):  
P. González ◽  
J. A. Carrillo ◽  
F. Gámiz
Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 50
Author(s):  
Matthias Kocher ◽  
Mathias Rommel ◽  
Pawel Michalowski ◽  
Tobias Erlbacher

Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.


2009 ◽  
Vol 00 (00) ◽  
pp. 090904073309027-8
Author(s):  
H.W. Wang ◽  
S. Kyriacos ◽  
L. Cartilier

2007 ◽  
Vol 55 (S 1) ◽  
Author(s):  
W Schiller ◽  
K Spiegel ◽  
T Schmid ◽  
H Rudorf ◽  
S Flacke ◽  
...  

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