Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy

1998 ◽  
Vol 411 (3) ◽  
pp. L865-L871 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Luis A. Zepeda-Ruiz ◽  
W.Henry Weinberg
Keyword(s):  
Misfit Dislocation ◽  
Interfacial Stability ◽  
Dislocation Formation

Multiscale Analysis of Interfacial Stability and Misfit Dislocation Formation in Layer-By-Layer Semiconductor Heteroepitaxy

1998 ◽  
Vol 538 ◽  
Author(s):  
L. A. Zepeda-Ruiz ◽  
D. Maroudas ◽  
W. H. Weinberg
Keyword(s):  
Misfit Dislocation ◽  
Morphological Characteristics ◽  
Film Surface ◽  
Dislocation Network ◽  
Recent Experimental Data ◽  
Layer By Layer ◽  
Interfacial Stability ◽  
Strain Fields ◽  
Dislocation Formation ◽  
Continuum Elasticity

AbstractA theoretical analysis based on continuum elasticity theory and atomistic simulations is presented of the interfacial stability with respect to misfit dislocation formation, the strain fields, and the film surface morphology during layer-by-layer semiconductor heteroepitaxy. The energetics of the transition from a coherent to a semicoherent interface consisting of a misfit dislocation network, the structure of this semicoherent interface, the resulting strain fields and the morphological characteristics of the epitaxial film surfaces are calculated for InAs/GaAs(111)A. Continuum elasticity is found to describe the atomistic simulation results very well. Our theoretical results are discussed in the context of recent experimental data.

Interfacial Stability and Misfit Dislocation Formation in InAs/Gaas(110) Heteroepitaxy

1997 ◽  
Vol 505 ◽  
Author(s):  
Luis A. Zepeda-Ruiz ◽  
Dimitrios Maroudas ◽  
W. Henry Weinberg
Keyword(s):  
Misfit Dislocation ◽  
Film Surface ◽  
Atomic Scale ◽  
Recent Experimental Data ◽  
Misfit Dislocations ◽  
Interfacial Stability ◽  
Coherent Interface ◽  
Gaas Buffer Layer ◽  
Critical Film Thickness ◽  
Dislocation Formation

ABSTRACTA comprehensive atomic-scale study is presented of the mechanical behavior of the InAs epitaxial film, the interfacial stability with respect to misfit dislocation formation, and the film surface morphology in InAs/GaAs(110) heteroepitaxy. If a GaAs buffer layer of ten-monolayer thickness is used in the epitaxial growth, a transition is predicted from a coherent to a semi- coherent interface consisting of a regular array of edge interfacial misfit dislocations at a critical film thickness of six monolayers. A second transition to a semicoherent interface consisting of a completely developed network of perpendicularly intersecting misfit dislocations is predicted at thicknesses greater than 150 monolayers. Our simulation results are in excellent agreement with recent experimental data.

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

The effect of implantation temperature on the mechanism of misfit dislocation formation

1978 ◽  
Vol 45 (2) ◽  
pp. 377-385 ◽  
Author(s):  
V. V. Kalinin ◽  
N. N. Gerasimenko ◽  
S. I. Stenin
Keyword(s):  
Misfit Dislocation ◽  
Implantation Temperature ◽  
Dislocation Formation

Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy

2000 ◽  
Vol 209 (4) ◽  
pp. 716-723 ◽  
Author(s):  
H. Fukuto ◽  
P. Feichtinger ◽  
G.D. U'Ren ◽  
S. Lindo ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Misfit Dislocation ◽  
Vapor Phase Epitaxy ◽  
Silicon Vapor ◽  
Dislocation Formation

Stabilization of strained multilayers by thin interlayers

1993 ◽  
Vol 8 (7) ◽  
pp. 1572-1577 ◽  
Author(s):  
J.P. Hirth
Keyword(s):  
Shear Stress ◽  
Misfit Dislocation ◽  
Pure Shear ◽  
Lattice Parameters ◽  
Biaxial Stress ◽  
Thin Interlayer ◽  
Dislocation Formation

Strained multilayers composed of two misfitting layers and a third, thin interlayer are considered. With appropriate intermediate lattice parameters for the interlayer, the latter is shown to stabilize the structure with respect to misfit dislocation formation. Cases of misfit corresponding both to balanced biaxial stress and to pure shear stress in the interface are treated.

Misfit dislocation formation in the AlGaN∕GaN heterointerface

2004 ◽  
Vol 96 (12) ◽  
pp. 7087-7094 ◽  
Author(s):  
J. A. Floro ◽  
D. M. Follstaedt ◽  
P. Provencio ◽  
S. J. Hearne ◽  
S. R. Lee
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Formation

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

2012 ◽  
Vol 717-720 ◽  
pp. 313-318 ◽  
Author(s):  
Xuan Zhang ◽  
Tetsuya Miyazawa ◽  
Hidekazu Tsuchida
Keyword(s):  
Temperature Gradient ◽  
Misfit Dislocation ◽  
Annealing Temperature ◽  
Critical Value ◽  
Critical Conditions ◽  
Formation Mechanisms ◽  
Misfit Dislocations ◽  
Interfacial Dislocations ◽  
Annealing Experiments ◽  
Dislocation Formation

Thermal annealing experiments were performed to determine the critical conditions of misfit dislocation formation in 4H-SiC epilayers in a temperature range of 1400-1800 °C. Misfit dislocations were observed to form at a given annealing temperature if the temperature gradient across the epi-wafer exceeded a critical value. It was also found that two types of interfacial dislocations could form under different stress conditions. Their formation mechanisms are discussed.

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