Thermoelectric Properties of Heavily Doped Polycrystalline SrTiO3

Author(s):  
Nguyen Trong Tinh ◽  
Toshihide Tsuji
2015 ◽  
Vol 44 (10) ◽  
pp. 3556-3562 ◽  
Author(s):  
Limin Ruan ◽  
Jun Luo ◽  
Hangtian Zhu ◽  
Huaizhou Zhao ◽  
Jingkui Liang

2013 ◽  
Vol 102 (18) ◽  
pp. 183905 ◽  
Author(s):  
Yifeng Wang ◽  
Chunlei Wan ◽  
Xiaoyan Zhang ◽  
Liming Shen ◽  
Kunihito Koumoto ◽  
...  

2015 ◽  
Vol 118 (24) ◽  
pp. 245101 ◽  
Author(s):  
V. Ponnambalam ◽  
Donald T. Morelli

2012 ◽  
Vol 1408 ◽  
Author(s):  
F. Suriano ◽  
M. Ferri ◽  
S. Solmi ◽  
L. Belsito ◽  
A. Roncaglia ◽  
...  

ABSTRACTAn experimental investigation about the thermoelectric properties of heavily doped p ad n-type nanocrystalline silicon nanowires (NWs) is described. The NWs are produced with low cost CMOS compatible processes, highly customizable in terms of cross-section and placement, which enables the fabrication of both stacked NWs in nearly vertical arrays within nanostructured templates built with SiO2/Si3N4 thin films and individual, freestanding NWs suited for thermal conductivity measurements. The cross-section dimensions of the investigated NWs range between 30 and 120 nm in size and up to about 2 cm in length. The structure of the NWs, as shown by SEM/TEM observations, is nanocrystalline with average size of the nanocrystals in one dimension that is comparable with the nanowire diameter. On the NWs, Seebeck coefficient, electrical resistivity and thermal conductivity have been measured, yielding thermoelectric figure of merit (ZT) values of 0.2 at 300 K for the best case.


2014 ◽  
Vol 211 (6) ◽  
pp. 1308-1314 ◽  
Author(s):  
D. Stathokostopoulos ◽  
E. C. Stefanaki ◽  
M. Ioannou ◽  
G. S. Polymeris ◽  
D. Chaliampalias ◽  
...  

2014 ◽  
Vol 94 ◽  
pp. 18-24 ◽  
Author(s):  
Huchuan Zhou ◽  
P. Kropelnicki ◽  
J.M. Tsai ◽  
Chengkuo Lee

2009 ◽  
Vol 38 (7) ◽  
pp. 1002-1007 ◽  
Author(s):  
Yanjie Cui ◽  
James R. Salvador ◽  
Jihui Yang ◽  
Hsin Wang ◽  
Gisele Amow ◽  
...  

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