Optical Pumping of Rubidium Vapor with Laser-Diodes: Application to Coherent Optical Communications

1989 ◽  
pp. 431-433 ◽  
Author(s):  
M. Têtu ◽  
N. Cyr ◽  
B. Villeneuve ◽  
V. Giordano ◽  
S. Thériault ◽  
...  
GPS Solutions ◽  
2021 ◽  
Vol 25 (3) ◽  
Author(s):  
S. Micalizio ◽  
F. Levi ◽  
C. E. Calosso ◽  
M. Gozzelino ◽  
A. Godone

AbstractWe present the results of 10 years of research related to the development of a Rubidium vapor cell clock based on the principle of pulsed optical pumping (POP). Since in the pulsed approach, the clock operation phases take place at different times, this technique demonstrated to be very effective in curing several issues affecting traditional Rb clocks working in a continuous regime, like light shift, with a consequent improvement of the frequency stability performances. We describe two laboratory prototypes of POP clock, both developed at INRIM. The first one achieved the best results in terms of frequency stability: an Allan deviation of σy(τ) = 1.7 × 10−13 τ−1/2, being τ the averaging time, has been measured. In the prospect of a space application, we show preliminary results obtained with a second more recent prototype based on a loaded cavity-cell arrangement. This clock has a reduced size and exhibited an Allan deviation of σy(τ) = 6 × 10−13 τ−1/2, still a remarkable result for a vapor cell device. In parallel, an ongoing activity performed in collaboration with Leonardo S.p.A. and aimed at developing an engineered space prototype of the POP clock is finally mentioned. Possible issues related to space implementation are also briefly discussed. On the basis of the achieved results, the POP clock represents a promising technology for future GNSSs.


2017 ◽  
Vol 810 ◽  
pp. 012053
Author(s):  
S P Najda ◽  
T Slight ◽  
P Perlin ◽  
O Odedina ◽  
T Suski ◽  
...  

1998 ◽  
Vol 09 (04) ◽  
pp. 1007-1080 ◽  
Author(s):  
MANIJEH RAZEGHI

We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.


MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 324-327 ◽  
Author(s):  
Hiroaki Ohta ◽  
Kuniyoshi Okamoto

AbstractTo achieve 520–532 nm green laser diodes (LDs), nonpolar and semipolar nitrides have attracted much attention because their usage leads to the elimination of the quantum-confined Stark effect and higher optical gains in this wavelength region. Since the breakthrough in the homoepitaxial growth technology for them, many nonpolar m -plane devices such as mW-class blue light-emitting diodes, violet 405 nm LDs, blue 460 nm LDs, and blue-green LDs beyond 490 nm have been announced. Advantages such as small blueshift and high slope efficiency (high output power to injected current ratio) have been confirmed for the first time in m -plane LDs beyond the blue region. On the other hand, the semipolar plane is also a candidate for green LDs. The pulsed operation of semipolar (1011) and (1122) violet LDs and lasing for a (1122) LD at 514 nm by optical pumping also have been reported. Such rapid progress in this research field will be reviewed.


2009 ◽  
Vol 282 (7) ◽  
pp. 1326-1334 ◽  
Author(s):  
Gordana Školnik ◽  
Nataša Vujičić ◽  
Ticijana Ban

2014 ◽  
Vol 61 (12) ◽  
pp. 1009-1017
Author(s):  
N. Korneev ◽  
Y.M. Torres ◽  
C. Gutiérrez-Parra ◽  
Y. Ortega

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