Nonpolar/Semipolar GaN Technology for Violet, Blue, and Green Laser Diodes

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 324-327 ◽  
Author(s):  
Hiroaki Ohta ◽  
Kuniyoshi Okamoto
Keyword(s):  
Stark Effect ◽  
Optical Pumping ◽  
Laser Diodes ◽  
Wavelength Region ◽  
Green Laser ◽  
Research Field ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Semipolar Gan ◽  
First Time

AbstractTo achieve 520–532 nm green laser diodes (LDs), nonpolar and semipolar nitrides have attracted much attention because their usage leads to the elimination of the quantum-confined Stark effect and higher optical gains in this wavelength region. Since the breakthrough in the homoepitaxial growth technology for them, many nonpolar m -plane devices such as mW-class blue light-emitting diodes, violet 405 nm LDs, blue 460 nm LDs, and blue-green LDs beyond 490 nm have been announced. Advantages such as small blueshift and high slope efficiency (high output power to injected current ratio) have been confirmed for the first time in m -plane LDs beyond the blue region. On the other hand, the semipolar plane is also a candidate for green LDs. The pulsed operation of semipolar (1011) and (1122) violet LDs and lasing for a (1122) LD at 514 nm by optical pumping also have been reported. Such rapid progress in this research field will be reviewed.

Faceted growth of ({\bf {\overline 1}103})-oriented GaN domains on an SiO2-patterned m-plane sapphire substrate using polarity inversion

2017 ◽  
Vol 50 (1) ◽  
pp. 30-35 ◽  
Author(s):  
Hansub Yoon ◽  
Miyeon Jue ◽  
Dongsoo Jang ◽  
Chinkyo Kim
Keyword(s):  
Sapphire Substrate ◽  
Stark Effect ◽  
Heteroepitaxial Growth ◽  
Lower Growth ◽  
Polarity Inversion ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Dominant Configuration ◽  
Semipolar Gan ◽  
First Time

Heteroepitaxial growth of ({\overline 1}103)-oriented GaN domains on m-plane sapphire is energetically unfavourable in comparison with that of (1{\overline 1}0{\overline 3})-oriented GaN domains, but the faceted domains with ({\overline 1}103)-oriented GaN reveal a more m-facet-dominant configuration than (1{\overline 1}0{\overline 3})-oriented GaN in such a way that the quantum-confined Stark effect can be more effectively suppressed. It is reported here, for the first time, that semipolar ({\overline 1}103)-oriented and faceted GaN domains can be grown on an SiO2-patterned m-plane sapphire substrate by employing polarity inversion of initially nucleated (1{\overline 1}0{\overline 3})-oriented GaN domains. This polarity inversion of semipolar GaN was found to occur when the domains were grown with a 20–37.5 times higher V/III ratio and 70 K lower growth temperature than corresponding parameters for polarity-not-inverted domains. This work opens up a new possibility of effective suppression of the quantum-confined Stark effect by polarity-controlled semipolar GaN in an inexpensive manner in comparison with homoepitaxial growth of ({\overline 1}103)-oriented GaN on a GaN substrate.

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

Blue/green laser diodes and light emitting diodes

1993 ◽  
Vol 191 (1-2) ◽  
pp. 119-123 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
J.W. Cook ◽  
J.F. Schetzina
Keyword(s):  
Light Emitting Diodes ◽  
Laser Diodes ◽  
Green Laser ◽  
Light Emitting

High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates

2011 ◽  
Author(s):  
Mathew C. Schmidt ◽  
Christiane Poblenz ◽  
Yu-Chia Chang ◽  
Ben Li ◽  
Mark J. Mondry ◽  
...  
Keyword(s):  
High Performance ◽  
Laser Diodes ◽  
Green Laser ◽  
Semipolar Gan

GaN-BASED LASER DIODES

1998 ◽  
Vol 09 (04) ◽  
pp. 1007-1080 ◽  
Author(s):  
MANIJEH RAZEGHI
Keyword(s):  
Laser Diode ◽  
Growth Temperature ◽  
Optical Pumping ◽  
Light Emitting Diodes ◽  
Laser Diodes ◽  
Stimulated Emission ◽  
Main Concern ◽  
Light Emitting ◽  
Si Doping ◽  
Many Body Interactions

We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.

Sign in / Sign up

Export Citation Format

Share Document