MBE Growth of Quantum-Wire Structures on Top of Sharp Riges Using a Mesa-Patterned Substrate

1994 ◽  
pp. 213-217 ◽  
Author(s):  
S. Koshiba ◽  
H. Noge ◽  
Y. Nakamura ◽  
H. Akiyama ◽  
T. Inoshita ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Mbe Growth ◽  
Patterned Substrate

Natural Patterning of High-Index Gaas Surfaces

1993 ◽  
Vol 312 ◽  
Author(s):  
Richard Nötzel ◽  
Klaus H. Ploog
Keyword(s):  
Electronic Properties ◽  
Quantum Wire ◽  
High Index ◽  
Mbe Growth ◽  
Step Bunching ◽  
New Methods ◽  
Fundamental Research ◽  
Novel Structures

AbstractWe present new methods to directly syntesize III-V semiconductor quantum-wire and dot structures based on the evolution of well ordered surface corrugations on non-(100)- oriented substrates and on the controlled step bunching during MBE growth. The distinct electronic properties of these novel structures highlight their potential for fundamental research and advanced device concepts.

MBE growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizations

1994 ◽  
Vol 37 (4-6) ◽  
pp. 729-732 ◽  
Author(s):  
S. Koshiba ◽  
H. Noge ◽  
H. Ichinose ◽  
H. Akiyama ◽  
Y. Nakamura ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Nanometer Scale ◽  
Mbe Growth

Vertical MBE Growth of Si Fins on Sub-10 nm Patterned Substrate for High-Performance FinFET Technology

2021 ◽  
Author(s):  
Shuang Sun ◽  
JianHuan Wang ◽  
BaoTong Zhang ◽  
XiaoKang Li ◽  
QiFeng Cai ◽  
...  
Keyword(s):  
High Performance ◽  
Mbe Growth ◽  
Patterned Substrate

Atom diffusion during MBE growth on patterned substrate

1998 ◽  
Vol 43-44 ◽  
pp. 409-414 ◽  
Author(s):  
Jiang Jian ◽  
Joe X Zhou ◽  
Zhantian Zhong ◽  
Chua Soo-Jin
Keyword(s):  
Mbe Growth ◽  
Patterned Substrate ◽  
Atom Diffusion

scholarly journals AlGaAs MBE Growth and Formation of Quantum Wire Structures on Vicinal GaAs (110) Surfaces.

Shinku ◽  
1993 ◽  
Vol 36 (11) ◽  
pp. 862-868
Author(s):  
Hisao NAKASHIMA ◽  
Kenta KIMURA ◽  
Masamichi SATO ◽  
Masaaki IWANE ◽  
Koichi INOUE ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Mbe Growth

Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC

2005 ◽  
Vol 483-485 ◽  
pp. 163-168 ◽  
Author(s):  
Andreas Fissel
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Semiconductor Nanostructures ◽  
Two Dimensional ◽  
Nanorod Arrays ◽  
Mbe Growth ◽  
One Dimensional

The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod), and zero-dimensional (Quantum dot) structures based on SiC for functional applications are discussed. Development and implementation of a suitable MBE growth procedure for fabrication of heteropolytypic layer sequences are demonstrated in context with thermodynamic considerations. Furthermore, the growth of onedimensional structures based on cubic wires and nanorod arrays, also grown on Si(111), is shown. Moreover, the perspectives of quantum dot structures and a novel way to form 3C-SiC-dot structures within α-SiC has been discussed.

Microstructural investigation of surface roughness in MBE-grown AlAs

1995 ◽  
Vol 53 ◽  
pp. 454-455
Author(s):  
R. Rajesh ◽  
R. Droopad ◽  
C. H. Kuo ◽  
R. W. Carpenter ◽  
G. N. Maracas
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Growth Control ◽  
Native Oxide ◽  
Effusion Cell ◽  
Surface Oxide Layer ◽  
Microstructural Investigation ◽  
Mbe Growth ◽  
Film Substrate ◽  
And Control

Knowledge of material pseudodielectric functions at MBE growth temperatures is essential for achieving in-situ, real time growth control. This allows us to accurately monitor and control thicknesses of the layers during growth. Undesired effusion cell temperature fluctuations during growth can thus be compensated for in real-time by spectroscopic ellipsometry. The accuracy in determining pseudodielectric functions is increased if one does not require applying a structure model to correct for the presence of an unknown surface layer such as a native oxide. Performing these measurements in an MBE reactor on as-grown material gives us this advantage. Thus, a simple three phase model (vacuum/thin film/substrate) can be used to obtain thin film data without uncertainties arising from a surface oxide layer of unknown composition and temperature dependence.In this study, we obtain the pseudodielectric functions of MBE-grown AlAs from growth temperature (650°C) to room temperature (30°C). The profile of the wavelength-dependent function from the ellipsometry data indicated a rough surface after growth of 0.5 μm of AlAs at a substrate temperature of 600°C, which is typical for MBE-growth of GaAs.

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