Quantum Box: Gallium Arsenide Microclusters Embedded in Aluminum Arsenide

1987 ◽  
pp. 275-280
Author(s):  
A. Oshiyama
Keyword(s):  
Gallium Arsenide ◽  
Aluminum Arsenide

Influence of impurity inclusions on the form of the electrical reflection spectra of solid gallium arsenide-aluminum arsenide solutions

1974 ◽  
Vol 17 (6) ◽  
pp. 846-848
Author(s):  
B. A. Bobylev ◽  
Kh. B. Zembatov ◽  
A. F. Kravchenko ◽  
Yu. V. Loburets
Keyword(s):  
Gallium Arsenide ◽  
Aluminum Arsenide ◽  
Reflection Spectra

scholarly journals Оптические свойства InGaAs/InAlAs метаморфных наногетероструктур для фотопреобразователей лазерного и солнечного излучения

2018 ◽  
Vol 44 (19) ◽  
pp. 50
Author(s):  
В.М. Емельянов ◽  
Н.А. Калюжный ◽  
С.А. Минтаиров ◽  
М.З. Шварц
Keyword(s):  
Gallium Arsenide ◽  
Refractive Index ◽  
Cross Correlation ◽  
Correlation Coefficients ◽  
Aluminum Arsenide ◽  
Dispersion Curves ◽  
Bragg Reflector ◽  
Refractive Indices ◽  
Derivatives Of ◽  
Substantial Rise

AbstractReflectance spectroscopy has been used to determine the refractive indices of nanoscale In_ x Al_ y Ga_1– x – y As and In_ x Al_1– x As layers with indium and aluminum concentrations x = 0.21–0.24 and y = 0, 0.1, and 0.2 on specially created Bragg-reflector heterostructures at wavelengths in the range 700–2000 nm. It was demonstrated that the method based on an analysis of the auto- and cross-correlation coefficients of the wavelength derivatives of the dependence of the reflectance of structures of this kind in order to determine the dispersion curves of the materials forming a reflector. It was found that raising the concentration of indium in InGaAs and AlInAs leads to a substantial rise in the refractive index, with a preserved spectral run of the refractive indices, which is characteristic of gallium arsenide and aluminum arsenide.

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