Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method

1992 ◽  
pp. 281-286 ◽  
Author(s):  
T. Miyajima ◽  
K. Sasaki ◽  
S. Furukawa
Keyword(s):  
Optimum Condition ◽  
Film Formation ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Sic Film

Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 8) ◽  
pp. 1406-1410 ◽  
Author(s):  
Takashi Kuroi ◽  
Kenji Umezawa ◽  
Junji Yamane ◽  
Fumiya Shoji ◽  
Kenjiro Oura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Plasma Cvd ◽  
Ion Beam Analysis ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Thermal Release ◽  
Silicon Nitride Films ◽  
Beam Analysis

Annealing behavior of silicon nitride and silicon oxynitride films prepared by ECR plasma CVD method

1988 ◽  
Vol 33-34 ◽  
pp. 1094-1100 ◽  
Author(s):  
Takeshi Kamada ◽  
Takashi Hirao ◽  
Masatoshi Kitagawa ◽  
Kentaro Setsune ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxynitride ◽  
Plasma Cvd ◽  
Annealing Behavior ◽  
Ecr Plasma ◽  
Cvd Method

Effects of Ions on Properties of a-Si:H Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 12) ◽  
pp. 2192-2198 ◽  
Author(s):  
Koji Akiyama ◽  
Eiichiro Tanaka ◽  
Akio Takimoto ◽  
Masanori Watanabe
Keyword(s):  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method

Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method

1987 ◽  
Vol 26 (Part 2, No. 5) ◽  
pp. L544-L546 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Yoshio Manabe ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Radical Species ◽  
Ecr Plasma ◽  
Cvd Method

Defect Structure of SiON Films Prepared by ECR Plasma CVD Method

1992 ◽  
Vol 268 ◽  
Author(s):  
T. Izumi ◽  
T. Matsumori ◽  
M. Kitagawa ◽  
T. Hirao
Keyword(s):  
Defect Structure ◽  
Gas Flow ◽  
Defect Density ◽  
Resonance Method ◽  
Silicon Oxynitride ◽  
Deposition Condition ◽  
Dangling Bonds ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method

ABSTRACTThe defect structure of silicon oxynitride films prepared by the ECR Plasma CVD method have been studied by ESR(electron spin resonance) method. The ESR analysis revealed the presence of three paramagnetic defects,that is, Si dangling bonds(g=2.0055 ΔHpp=8 Oe), Si dangling bonds with N atom neighbors(g=2.004, ΔHpp=12 Oe) and E-center(g=2.0016, ΔHpp=4 Oe). These centers strongly depend on the deposition conditions, such as gas flow rate, and microwave powers. The defect density is minimum for the deposition condition of SiON films, under the gas flow O2 /(N2 +02)ratio of 1/3, gas pressure of 8.3x10−4Torr and microwave power of 50OW.

Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method

1988 ◽  
Vol 27 (Part 1, No. 4) ◽  
pp. 528-533 ◽  
Author(s):  
Takashi Hirao ◽  
Takeshi Kamada ◽  
Masatoshi Kitagawa ◽  
Kentaro Setsune ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Thermal Stability Of

Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 2, No. 1) ◽  
pp. L21-L23 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Takeshi Kamada ◽  
Takuichi Ohmura ◽  
...  
Keyword(s):  
Silicon Oxynitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method

Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method

1989 ◽  
Vol 28 (Part 2, No. 6) ◽  
pp. L1048-L1050 ◽  
Author(s):  
Masatoshi Kitagawa ◽  
Takashi Hirao ◽  
Takuichi Ohmura ◽  
Tomio Izumi
Keyword(s):  
Structural Properties ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method
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