Rutherford Backscattering Spectrometry and Nuclear Reaction Analysis

2003 ◽  
pp. 229-246 ◽  
Author(s):  
S. H. Sie
Keyword(s):  
Nuclear Reaction ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Nuclear Reaction Analysis

Preparation and characterization of oxide film electrodes

1997 ◽  
Vol 75 (11) ◽  
pp. 1759-1765 ◽  
Author(s):  
A. De Battisti ◽  
G. Lodi ◽  
L. Nanni ◽  
G. Battaglin ◽  
A. Benedetti
Keyword(s):  
Oxide Film ◽  
Nuclear Reaction ◽  
Mixed Oxide ◽  
Preparation Method ◽  
Rutherford Backscattering Spectrometry ◽  
Oxide Films ◽  
Rutherford Backscattering ◽  
Model Systems ◽  
Nuclear Reaction Analysis

In this paper are presented data on the preparation and characterization of different oxide electrodes. RuO2–TiO2, IrO2–TiO2, and SnO2–Sb2O5 mixed-oxide films have been taken as model systems. For the first, the traditional preparation method based on the pyrolysis of precursor salt deposits was adopted. For the SnO2-based films, the spray pyrolysis preparation has been used. The characterization of RuO2–TiO2 films confirms the existence of a solid solution between the two component oxides over a wide composition range. Rutherford backscattering spectrometry confirms the occurrence of segregation of titanium oxide species in the outermost part of the films. Nuclear reaction analysis indicates that large amounts of carbon and hydrogen impurities are trapped in the oxide films. SnO2-based films were found to be less porous and chemically more simple. The differences between the two systems have been discussed in terms of the preparation method and the differences in chemical properties of the precursors. Keywords: oxide film electrodes, mixed-oxide films, Rutherford backscattering spectrometry, nuclear reaction analysis.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

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