Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Ion Beam Techniques for Low K Materials Characterization

1998 ◽  
Vol 511 ◽  
Author(s):  
H. Bakhru ◽  
A. Kumar ◽  
T. Kaplan ◽  
M. Delarosa ◽  
J. Fortin ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Ion Beam Analysis ◽  
Analytical Technique ◽  
Analysis Techniques ◽  
Teflon Af ◽  
Beam Analysis ◽  
Low K

ABSTRACTIon beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous Si0 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including Si02:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

scholarly journals Status of Ion Beam Modification and Analysis of Materials at STU MTF

2018 ◽  
Vol 26 (43) ◽  
pp. 9-16
Author(s):  
Jozef Dobrovodský ◽  
Dušan Vaňa ◽  
Matúš Beňo ◽  
Anna Závacká ◽  
Martin Muška ◽  
...  
Keyword(s):  
Materials Science ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
First Year ◽  
Elastic Recoil ◽  
Ion Beam Modification ◽  
University Of Technology ◽  
Ion Accelerator ◽  
Beam Analysis

Abstract The new Ion Beam Centre (IBC) equipped with 6 MV tandem ion accelerator and 500 kV ion implanter systems was built at the Slovak University of Technology, Faculty of Materials Science and Technology (STU MTF). The facility provides Ion Beam Modification of Materials (IBMM) and Ion Beam Analysis (IBA), which includes Rutherford Backscattering Spectrometry (RBS), Particle Induced X-ray Analysis (PIXE), Elastic Recoil Spectrometry (ERDA) and Nuclear Reaction Analysis (NRA). Presented are selected experimental procedures carried out in the IBC during the first year of operation. They present examples of a typical IBA performed, such as thin film characterisation in nm to tens of µm range, elemental depth profiles and sensitivity to the light elements enhancement by non-Rutherford cross-section regime application along with the crystalline sample channelling spectra and boron content measurement.

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

H-passivation of Si(100) By Wet Chemical Cleaning: Discovery of Ordering

1998 ◽  
Vol 513 ◽  
Author(s):  
V. Atluri ◽  
N. Herbots
Keyword(s):  
Ion Beam ◽  
Elastic Recoil ◽  
Signal To Noise ◽  
Chemical Cleaning ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Atomic Force ◽  
Beam Analysis ◽  
Wet Chemical ◽  
First Time

ABSTRACTSi(100) is H-passivated via a modified pre-RCA cleaning followed by etching in HF:alcohol, to produce ordered (1 × 1) templates which desorb at low temperature (T ≥ 600°C). Four sets of 12 wafers, each set processed identically, are used to test reproducibility, and are characterized by Ion Beam Analysis (IBA), Tapping Mode Atomic Force Microscope (TMAFM), and Fourier Transform Infrared Spectroscopy (FTIR). The absolute coverage of oxygen and carbon is measured by ion channeling combined with nuclear resonance at 3.05 MeV for oxygen and 4.265 MeV for carbon, improving the signal to noise by a factor 10 for oxygen and by 120 for carbon. It is then possible for the first time to measure ordering of oxygen atoms with respect to the surface by comparing the amount of oxygen from rotating random spectra to the disordered oxygen measured by channeling. Hydrogen is measured via the elastic recoil detection (ERD) of 4He2+ at 2.8 MeV.Si(100) etched in HF:methanol after a modified preliminary RCA cleaning yields the cleanest surface. The data suggest that Si(100) passivated by HF in alcohol is terminated by an ordered hydroxide layer, which desorbs at lower temperatures than the more refractory Si02.

scholarly journals Composition and Structure of Sputter Deposited Erbium Hydride thin Films

2000 ◽  
Vol 616 ◽  
Author(s):  
D.P. Adams ◽  
J.A. Romero ◽  
M.A. Rodriguez ◽  
J.A. Floro ◽  
J.C. Banks
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Density Ratio ◽  
Areal Density ◽  
Ion Beam Sputtering ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Metal Sublattice ◽  
Sputter Deposited

AbstractErbium hydride thin films are grown onto polished, a-axis α Al2O3 (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H2 partial pressure of 1.4 ×10−4 Torr. Growth is conducted at several substrate temperatures between 30 and 500°C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275°C, while for growth above ∼430 °C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH2. RBS and Auger electron spectroscopy confirm that sputtered erbium hydride thin films are relatively free of impurities.

Characterization of Plasma Immersion Deposited Multilayer Coatings by Ion Beam Techniques Combined with Energy Filtered Transmission Electron Microscopy

2005 ◽  
Vol 908 ◽  
Author(s):  
Florian Schwarz ◽  
Joerg K. N. Lindner ◽  
Maik Häeberlen ◽  
Goetz Thorwarth ◽  
Claus Hammerl ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Hard Coatings ◽  
Elemental Distribution ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Beam Analysis

AbstractMultilayered and nanostructured coatings of amorphous carbon (DLC), silicon composite multilayers and nanocluster containing films today have great potential for applications as hard coatings, wear reduction layers and as diffusion barriers in biomaterials. Plasma immersion ion implantation and deposition (PIII&D) is a powerful technique to synthesize such films. The quantitative nanoscale analysis of the elemental distribution in such multielemental films and thin film stacks however is demanding.In this paper it is shown how the high spatial resolution capabilities of energy filtered trans-mission electron microscopy (EFTEM) chemical analysis can be combined with accurate and standard-less concentration determination of ion beam analysis (IBA) techniques like Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection Analysis (ERDA) to achieve absolute and accurate multielement concentration profiles in complicated nanomaterials.

Sign in / Sign up

Export Citation Format

Share Document