Current-Induced Resistive State

2001 ◽  
pp. 211-233
Author(s):  
Rudolf Peter Huebener
Keyword(s):  
Resistive State

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

Irreversible resistive state switching in devices with homoleptic cobalt(II) complex active layer

2021 ◽  
Author(s):  
Ratheesh K Vijayaraghavan ◽  
Biswajit K Barman ◽  
Manas Khatua ◽  
Bappaditya Goswami ◽  
Subhas Samanta
Keyword(s):  
Active Layer ◽  
Resistive State ◽  
State Switching

Modelling the Resistive State in a Transition Edge Sensor

2012 ◽  
Vol 167 (3-4) ◽  
pp. 114-120
Author(s):  
A. Kozorezov ◽  
A. A. Golubov ◽  
D. D. E. Martin ◽  
P. A. J. de Korte ◽  
M. A. Lindeman ◽  
...  
Keyword(s):  
Transition Edge Sensor ◽  
Resistive State ◽  
Transition Edge

Kinematic vortices and phase slip lines in the dynamics of the resistive state of narrow superconductive thin film channels

1993 ◽  
Vol 213 (1-2) ◽  
pp. 193-199 ◽  
Author(s):  
A. Andronov ◽  
I. Gordion ◽  
V. Kurin ◽  
I. Nefedov ◽  
I. Shereshevsky
Keyword(s):  
Thin Film ◽  
Resistive State ◽  
Phase Slip ◽  
Slip Lines

The Resistive State of a Random Weak Link Network

1990 ◽  
pp. 11-19
Author(s):  
M. G. Blamire ◽  
J. E. Evetts
Keyword(s):  
Weak Link ◽  
Resistive State

Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation

2020 ◽  
Vol 20 (5) ◽  
pp. 3283-3286 ◽  
Author(s):  
Yuehua An ◽  
Xia Shen ◽  
Yuying Hao ◽  
Pengfei Guo ◽  
Weihua Tang
Keyword(s):  
Ultraviolet Radiation ◽  
High Resistance ◽  
High Resistance State ◽  
High Ratio ◽  
Resistance Switching ◽  
Resistive State ◽  
Oxide Systems ◽  
Low Resistance ◽  
Resistance State

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I–V characteristics of Au/Ti/β-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.

scholarly journals Nonlinear Response of a Superconductor of the Bi-Sr-Ca-Cu-O System to an Alternating Magnetic Field in the Superconducting Transition Temperature Range

2018 ◽  
Vol 185 ◽  
pp. 08005
Author(s):  
Alexander Sergeev ◽  
Igor Golev ◽  
Victoria Gvozdevskaya ◽  
Anastasia Barkalova
Keyword(s):  
Magnetic Field ◽  
Nonlinear Response ◽  
Alternating Magnetic Field ◽  
Resistive State ◽  
Superconducting Transition ◽  
Critical Temperatures ◽  
Temperature Range ◽  
Nonlinear Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics

The nonlinear response of the superconductor of the Bi-Sr-Ca-Cu-O system in the temperature range of the superconducting transition under the action of a harmonic alternating magnetic field is experimentally studied. For multiphase superconductors having in their volume regions with distinct critical temperatures, the effect of odd harmonics in the response signal is observed. The contribution of crystallites and the system of weak bonds between the crystallites in the nonlinear response is singled out. It was found that the nonlinear properties of the investigated samples in the resistive state are determined mainly by the nonlinear current-voltage characteristics of the system of weak bonds between the crystallites.

High resistive state retention in room temperature solution processed biocompatible memory devices for health monitoring applications

MRS Advances ◽  
2019 ◽  
Vol 4 (24) ◽  
pp. 1409-1415
Author(s):  
Akshita Mishra ◽  
Soumen Saha ◽  
Henam Sylvia Devi ◽  
Abhisek Dixit ◽  
Madhusudan Singh
Keyword(s):  
Thin Films ◽  
Health Monitoring ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Low Cost ◽  
Phosphate Buffer Solution ◽  
Thick Layer ◽  
Resistive State ◽  
Memory Devices ◽  
Monitoring Applications

AbstractWearable and bio-implantable health monitoring applications require flexible memory devices that can be used to locally store body vitals prior to transmission or to support local data processing in distributed smart systems. In recent years, non-volatile resistive random access memories composed of oxide-based insulators such as hafnium oxide and niobium pentoxide have attracted a great deal of interest. Unfortunately, hafnium and niobium are not low-cost materials and may also present health challenges. In this work, we have explored the alternative of using titanium dioxide as the insulating oxide using a low-cost solution-phase deposition process. Aqueous sol deposited thin films were deposited on standard RCA-cleaned commercial thermal silicon dioxide (500 nm) wafer (500 µm). Patterned bottom contacts Cr/Au (∼200/300 Å) using shadow masks were deposited on the substrate using successive DC sputtering, and thermal evaporation, respectively at 5 X 10-6 Torr. A sol was prepared using titanium (IV) butoxide as precursor hydrolysed under water and ethanol to form a colloidal solution (sol) at 50°C under constant stirring. Powder X-Ray Diffraction (PXRD) scans of calcined (from sol at 750°C) nanoparticles show a mixture of anatase and rutile phases, confirming the composition of the material. The sol was slowly cooled to room temperature before being spin coated at low rotational speeds on to the substrate in multiple steps involving several spin coating and drying steps to form a uniform film. Top contacts (Ag) of thickness (∼500 Å) were deposited on the sol-deposited thin films using thermal evaporation. The resulting devices were coated with a thick layer of polydimethylsiloxane (PDMS) using a 10:1 ratio of base elastomer and curing agent respectively. After drying the PDMS, resistance measurements were carried out. A high resistance state was detected prior to electroforming in the air at ∼5 MΩ which remains nearly unchanged (∼4.3 MΩ) when dipped in a ∼7.4 pH phosphate buffer solution (equivalent to human blood’s pH (reference average value ∼7.4 pH)). Unencapsulated devices (UM1) were further characterized in air using a Keithley 4200-SCS semiconductor parameter analyzer in dual sweep mode to observe repeatable hysteresis behavior with a large difference between trace and retrace R-V characteristics (∼50±3% over a pristine device), which compares favorably with recent data in the literature on high-performance sputtered TiO2 memristors. Unchanged retention ratio using biocompatible device materials and encapsulation suggests that these devices can be used for biomedical implantable sensor electronics.

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