To represent the valence bands of cubic semiconductors a coordinate transformation is proposed
such that the hole energy becomes an independent variable. This choice considerably
simplifies the evaluation of the integrated scattering probability and the choice of the state
after scattering in a Monte Carlo procedure. In the new coordinate system, a numerically
given band structure is expanded into a series of spherical harmonics. This expansion technique
is capable of resolving details of the band structure at the Brillouin zone boundary and
hence can span an energy range of several electron-volts. Results of a Monte Carlo simulation
employing the new band representation are shown.
A Hot-Hole Transport Model Based on Spherical
Harmonics Expansion of the Anisotropic Bandstructure