Microfocussed Ion Beams for Surface Analysis and Depth Profiling

1985 ◽  
pp. 71-78
Author(s):  
M. Preuss ◽  
D. Kingham
Keyword(s):  
Surface Analysis ◽  
Depth Profiling ◽  
Ion Beams

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

scholarly journals Surface Analysis by MeV Ion Beams and Microscopy

2009 ◽  
Vol 15 (S3) ◽  
pp. 87-88
Author(s):  
José A. R. Pacheco de Carvalho ◽  
Cláudia F. F. P. R. Pacheco ◽  
António D. Reis
Keyword(s):  
Surface Analysis ◽  
Nuclear Reactions ◽  
Ion Beam ◽  
Ion Beams ◽  
Analysis Method ◽  
Analysis Techniques ◽  
Target Composition ◽  
Nuclear Techniques ◽  
Surface Analysis Techniques ◽  
Wide Range

AbstractMaterial analysis, specially surface analysis of materials, has been increasingly important. A wide range of surface analysis techniques is available. The techniques are, generally, complementary. There are nuclear and non-nuclear techniques, e.g. microscopy. Nuclear techniques, which are nondestructive, permit analysis for a few microns near the surface. They have been applied to areas such as scientific, technologic, industry, arts and medicine, using MeV ion beams. Nuclear reactions permit to achieve high sensitivities for detection of light elements in heavy substrates and also discrimination of isotopes. We use ion-ion nuclear reactions, elastic scattering and the energy analysis method, where an energy spectrum is obtained of ions from the target for a chosen energy of the incident ion beam. The target composition and concentration profile information contained in the spectrum is computationally obtained through a computer program that has been developed for predicting such energy spectra. Predicted spectra obtained for variations of target parameters are compared with experimental data, giving that information. SEM and TEM are also used.

ToF-SIMS depth profiling of vitamin C layers using Cs+ and Xe+ ion beams

2010 ◽  
Vol 43 (1-2) ◽  
pp. 190-193 ◽  
Author(s):  
Nimer Wehbe ◽  
Laurent Houssiau
Keyword(s):  
Vitamin C ◽  
Depth Profiling ◽  
Ion Beams ◽  
Tof Sims ◽  
Sims Depth Profiling

scholarly journals Non-Destructive Surface Analysis of Materials by MeV Ion Beams, Microscopy and Computer Simulation

2016 ◽  
Vol 22 (S4) ◽  
pp. 42-43
Author(s):  
J. Pacheco de Carvalho ◽  
C. F. R. Pacheco ◽  
A. D. Reis
Keyword(s):  
Computer Simulation ◽  
Surface Analysis ◽  
Ion Beams ◽  
Non Destructive

Two Methods Using Ion Beams for Detecting and Depth Profiling Light Impurities in Materials

1976 ◽  
pp. 295-307 ◽  
Author(s):  
B. TERREAULT ◽  
M. LEROUX ◽  
J. G. MARTEL ◽  
R. ST-JACQUES ◽  
C. BRASSARD ◽  
...  
Keyword(s):  
Depth Profiling ◽  
Ion Beams ◽  
Light Impurities

Depth profiling of taxol-loaded poly(styrene-b-isobutylene-b-styrene) using Ga+ and C60+ ion beams

2006 ◽  
Vol 252 (19) ◽  
pp. 6615-6618 ◽  
Author(s):  
R.M. Braun ◽  
J. Cheng ◽  
E.E. Parsonage ◽  
J. Moeller ◽  
N. Winograd
Keyword(s):  
Depth Profiling ◽  
Ion Beams

Depth profiling of polymer samples using Ga+ and C60 + ion beams

2008 ◽  
Vol 41 (1) ◽  
pp. 6-10 ◽  
Author(s):  
N. Nieuwjaer ◽  
C. Poleunis ◽  
A. Delcorte ◽  
P. Bertrand
Keyword(s):  
Depth Profiling ◽  
Ion Beams
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