Experimental and ab initio study of Ta-doped ZnO semiconductor

2010 ◽  
pp. 181-186
Author(s):  
E. L. Muñoz ◽  
D. Richard ◽  
P. D. Eversheim ◽  
M. Rentería
2010 ◽  
Vol 197 (1-3) ◽  
pp. 181-186 ◽  
Author(s):  
E. L. Muñoz ◽  
D. Richard ◽  
P. D. Eversheim ◽  
M. Rentería

2016 ◽  
Vol 30 (23) ◽  
pp. 1650291 ◽  
Author(s):  
D. E. Aimouch ◽  
S. Meskine ◽  
R. Hayn ◽  
A. Zaoui ◽  
A. Boukortt

We present the results of ab initio calculations of K-doped ZnO in the wurtzite structure using a supercell of 32 atoms and density functional theory. A complete analysis of its electronic, optical and magnetic properties is provided. The local spin density approximation (LSDA) has been used to analyze the density of states and to understand the K influence at different concentration values. The material is revealed to become a [Formula: see text]-type doped semiconductor. The optical constant or refractive index, the dielectric function, and the absorption coefficient were determined and show a good agreement with available experimental data. Potassium doping leads to an absorption peak at about 380 nm. That peak might improve the absorption characteristics of ZnO for solar cell or optical applications.


2010 ◽  
Vol 108 (8) ◽  
pp. 084308 ◽  
Author(s):  
A. L. He ◽  
X. Q. Wang ◽  
Y. Q. Fan ◽  
Y. P. Feng

2016 ◽  
Vol 743 ◽  
pp. 012002
Author(s):  
A González-García ◽  
V Mendoza-Estrada ◽  
W López-Pérez ◽  
C Pinilla- Castellanos ◽  
R González-Hernández

2012 ◽  
Vol 407 (16) ◽  
pp. 3121-3124 ◽  
Author(s):  
Emiliano L. Muñoz ◽  
Marcio E. Mercurio ◽  
Moacir R. Cordeiro ◽  
Luciano F.D. Pereira ◽  
Artur W. Carbonari ◽  
...  

2015 ◽  
Vol 218 ◽  
pp. 45-48 ◽  
Author(s):  
A. Slassi ◽  
N. lakouari ◽  
Y. Ziat ◽  
Z. Zarhri ◽  
A. Fakhim Lamrani ◽  
...  

2017 ◽  
Vol 7 ◽  
pp. 620-627 ◽  
Author(s):  
M. Rouchdi ◽  
E. Salmani ◽  
B. Fares ◽  
N. Hassanain ◽  
A. Mzerd

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