Transport Properties and TEM Observation of R.A.D. Polycristalline Silicon Films

1979 ◽  
pp. 750-758 ◽  
Author(s):  
A. Johan ◽  
J. Ayerza ◽  
D. Bielle-Daspet ◽  
A. Rocher ◽  
C. Fontaine
Keyword(s):  
Transport Properties ◽  
Silicon Films

Effect of the Annealing on the Low-Temperature Charge Transport Properties of Heavily Boron-Doped Nanocrystalline Silicon Films for Thermoelectric Applications

2016 ◽  
Vol 3 (4) ◽  
Author(s):  
Laura Zulian ◽  
Francesco Segrado ◽  
Dario Narducci
Keyword(s):  
Low Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Power Factor ◽  
High Doping Level ◽  
Boron Doped ◽  
Nanocrystalline Silicon Films

Abstract Silicon is the reference material of microelectronics, is readily available, relatively unexpensive, and its use may take profit of a fantastic technology. This may explain why a substantial effort has focused on improving its thermoelectric efficiency, either by top-down nanostructuring or through suitable processing. In this paper we report an analysis of the electronic transport properties of heavily boron-doped nanocrystalline silicon films. High-temperature thermal treatments are confirmed to remarkably increase its thermoelectric power factor. Electrical conductivity and Hall effect measurements were carried out over the temperature range 20–300 K along with Seebeck coefficient measurements. We provide evidence of the occurrence of low-temperature hopping conduction between impurity subbands. Dopant ionization was studied as a function of temperature. Freeze-out temperature was found to correlate with the Seebeck coefficient in agreement with Pisarenko equation. This brings to the conclusion that, while untreated samples are weakly degenerate, the thermal processing reverts them into non-degenerate semiconductors, in spite of the high doping level.

Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Ferreira ◽  
H. Águas ◽  
L. Mendes ◽  
F. Fernandes ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Oxygen Content ◽  
Hydrogen Content ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Nano Crystalline ◽  
Doped Silicon

ABSTRACTThis work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≍ 4 mWcm−2) and with filament temperatures around 1850 °K have dark conductivities below 10−1Scm−1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about 10−2Scm−1.

Helium Versus Hydrogen Dilution of Silane in the Deposition of Polymorphous Silicon Films: Effects on the Structure and the Transport Properties

2003 ◽  
Vol 762 ◽  
Author(s):  
O. Saadane ◽  
S. Lebib ◽  
A.V. Kharchenko ◽  
V. Suendo ◽  
C. Longeaud ◽  
...  
Keyword(s):  
Transport Properties ◽  
Deposition Rate ◽  
Diffusion Length ◽  
Good Alternative ◽  
Silicon Films ◽  
Rf Power ◽  
Hydrogen Incorporation ◽  
Hydrogen Dilution ◽  
Hole Diffusion Length ◽  
Hydrogen Effusion

AbstractWe compare the deposition rate, hydrogen incorporation and optoelectronic properties of hydrogenated polymorphous silicon films produced either by the decomposition of silane-hydrogen or of silane-helium mixtures. Our results clearly show that He dilution allows to drastically reduce the RF power needed to achieve the same deposition rate as in the case of H2 dilution. Infrared spectroscopy and hydrogen effusion experiments show clear differences in the hydrogen bonding and content in both series of films. Interestingly, both He and hydrogen dilution result in films with improved transport properties, in particular the hole diffusion length, with respect to standard amorphous silicon. These results indicate that He dilution is a good alternative to H2 dilution to prepare intrinsic layers for solar cells.

Amorphous Silicon Films from Dichlorosilane and SiH4 for Solar Cells

1996 ◽  
Vol 420 ◽  
Author(s):  
A. M. Payne ◽  
S. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Films ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Electronic Transport Properties ◽  
Standard Cells

AbstractWe have deposited amorphous silicon films from mixtures of dichlorosilane (SiH2C12, DCS), and silane (SiH4) and made the first p-i-n solar cells using i-layers of this material. We measured optical and electronic transport properties of the DCS-derived films and relate them to the solar cell performance. The DCS cells are compared to standard cells made with SilH4.

Transport Properties of Amorphous Silicon Films on Quartz Substrate

1983 ◽  
Vol 22 (Part 1, No. 6) ◽  
pp. 903-907 ◽  
Author(s):  
B. Chakrabarti ◽  
S. Chaudhuri ◽  
A. K. Pal
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Quartz Substrate ◽  
Silicon Films

Microstructural Aspects Related to Carriers Transport Properties of Nanocrystalline Porous Silicon Films

1999 ◽  
Vol 146 (9) ◽  
pp. 3516-3521 ◽  
Author(s):  
M. L. Ciurea ◽  
V. Iancu ◽  
V. S. Teodorescu ◽  
L. C. Nistor ◽  
M. G. Blanchin
Keyword(s):  
Porous Silicon ◽  
Transport Properties ◽  
Silicon Films

Metallic transport properties of amorphous nickel - silicon films

1997 ◽  
Vol 9 (25) ◽  
pp. 5395-5411 ◽  
Author(s):  
R Rosenbaum ◽  
A Heines ◽  
A Palevski ◽  
M Karpovski ◽  
A Gladkikh ◽  
...  
Keyword(s):  
Transport Properties ◽  
Silicon Films ◽  
Nickel Silicon

Amorphous Silicon Films From Dichlorosilane and SiH4 For Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
A. M. Payne ◽  
S. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Films ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Electronic Transport Properties ◽  
Standard Cells

AbstractWe have deposited amorphous silicon films from mixtures of dichlorosilane (SiH2CI2, DCS), and silane (SiH4) and made the first p-i-n solar cells using i-layers of this material. We measured optical and electronic transport properties of the DCS-derived films and relate them to the solar cell performance. The DCS cells are compared to standard cells made with SiH4.

Sign in / Sign up

Export Citation Format

Share Document